Numerical simulation of intermediate-temperature disk type seal-less SOFC using pure hydrogen considering air back diffusion phenomenon

T. Tanaka, Y. Inui, N. Chitose, T. Akbay

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A one-dimensional simulation code for single cell intermediate-temperature disk-type seal-less SOFC is improved to include the air back diffusion phenomenon, which implies the diffusion of air into the fuel channel due to the mixing of the anode and cathode exhaust gases and the complete oxidation of hydrogen at the seal-less edge of the cell. The numerically obtained current density-single cell voltage (i-V) characteristic curves calculated by using the simulation code coincide well with the experimental ones. To investigate the effect of the air back diffusion phenomenon on the cell performance, the numerically obtained i -V curves without the air back diffusion phenomenon are compared with those considering the air back diffusion phenomenon. It is revealed that the single cell voltage reduction due to the air back diffusion phenomenon is negligible under normal operating conditions. However, it is made clear that the reduction of single cell voltage caused by the air back diffusion phenomenon becomes significant when the cell is operated under low fuel utilization conditions.

Original languageEnglish
Title of host publicationECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI)
Pages1273-1282
Number of pages10
Edition2 PART 2
DOIs
Publication statusPublished - Dec 1 2009
Event11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Publication series

NameECS Transactions
Number2 PART 2
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting
CountryAustria
CityVienna
Period10/4/0910/9/09

Fingerprint

Solid oxide fuel cells (SOFC)
Seals
Hydrogen
Computer simulation
Air
Temperature
Electric potential
Exhaust gases
Anodes
Cathodes
Current density
Oxidation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Tanaka, T., Inui, Y., Chitose, N., & Akbay, T. (2009). Numerical simulation of intermediate-temperature disk type seal-less SOFC using pure hydrogen considering air back diffusion phenomenon. In ECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI) (2 PART 2 ed., pp. 1273-1282). (ECS Transactions; Vol. 25, No. 2 PART 2). https://doi.org/10.1149/1.3205656

Numerical simulation of intermediate-temperature disk type seal-less SOFC using pure hydrogen considering air back diffusion phenomenon. / Tanaka, T.; Inui, Y.; Chitose, N.; Akbay, T.

ECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI). 2 PART 2. ed. 2009. p. 1273-1282 (ECS Transactions; Vol. 25, No. 2 PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, T, Inui, Y, Chitose, N & Akbay, T 2009, Numerical simulation of intermediate-temperature disk type seal-less SOFC using pure hydrogen considering air back diffusion phenomenon. in ECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI). 2 PART 2 edn, ECS Transactions, no. 2 PART 2, vol. 25, pp. 1273-1282, 11th International Symposium on Solid Oxide Fuel Cells (SOFC-XI)- 216th ECS Meeting, Vienna, Austria, 10/4/09. https://doi.org/10.1149/1.3205656
Tanaka T, Inui Y, Chitose N, Akbay T. Numerical simulation of intermediate-temperature disk type seal-less SOFC using pure hydrogen considering air back diffusion phenomenon. In ECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI). 2 PART 2 ed. 2009. p. 1273-1282. (ECS Transactions; 2 PART 2). https://doi.org/10.1149/1.3205656
Tanaka, T. ; Inui, Y. ; Chitose, N. ; Akbay, T. / Numerical simulation of intermediate-temperature disk type seal-less SOFC using pure hydrogen considering air back diffusion phenomenon. ECS Transactions - Solid Oxide Fuel Cells 11 (SOFC-XI). 2 PART 2. ed. 2009. pp. 1273-1282 (ECS Transactions; 2 PART 2).
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