Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

M. Pons; S. Nishizawa; P. Wellmann; M. Ucar; E. Blanquet; J. M. Dedulle; F. Baillet; D. Chaussende; C. Bernard; R. Madar

Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

M. Pons, S. Nishizawa, P. Wellmann, M. Ucar, E. Blanquet, J. M. Dedulle, F. Baillet, D. Chaussende, C. Bernard, R. Madar

Research output: Contribution to conference › Paper › peer-review

Abstract

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

Original language	English
Pages	1-12
Number of pages	12
Publication status	Published - Dec 1 2005
Externally published	Yes
Event	15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany Duration: Sept 5 2005 → Sept 9 2005

Other

Other	15th European Conference on Chemical Vapor Deposition, EUROCVD-15
Country/Territory	Germany
City	Bochum
Period	9/5/05 → 9/9/05

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Pons, M, Nishizawa, S, Wellmann, P, Ucar, M, Blanquet, E, Dedulle, JM, Baillet, F, Chaussende, D, Bernard, C & Madar, R 2005, 'Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics', Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, Germany, 9/5/05 - 9/9/05 pp. 1-12.

@conference{991df72683054d8c8d4e7e986f0fe6ee,

title = "Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics",

abstract = "Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a {"}daily interaction{"}. The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.",

author = "M. Pons and S. Nishizawa and P. Wellmann and M. Ucar and E. Blanquet and Dedulle, {J. M.} and F. Baillet and D. Chaussende and C. Bernard and R. Madar",

year = "2005",

month = dec,

day = "1",

language = "English",

pages = "1--12",

note = "15th European Conference on Chemical Vapor Deposition, EUROCVD-15 ; Conference date: 05-09-2005 Through 09-09-2005",

}

TY - CONF

T1 - Numerical simulation of SIC processes

T2 - 15th European Conference on Chemical Vapor Deposition, EUROCVD-15

AU - Pons, M.

AU - Nishizawa, S.

AU - Wellmann, P.

AU - Ucar, M.

AU - Blanquet, E.

AU - Dedulle, J. M.

AU - Baillet, F.

AU - Chaussende, D.

AU - Bernard, C.

AU - Madar, R.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

AB - Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

UR - http://www.scopus.com/inward/record.url?scp=31844440869&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31844440869&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844440869

SP - 1

EP - 12

Y2 - 5 September 2005 through 9 September 2005

ER -

Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

Abstract

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this