Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics

M. Pons, S. Nishizawa, P. Wellmann, M. Ucar, E. Blanquet, J. M. Dedulle, F. Baillet, D. Chaussende, C. Bernard, R. Madar

Research output: Contribution to conferencePaper

Abstract

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The different presented examples have the aim to show that this approach has the potential of a characterization tool which could be of great importance in the optimization of epitaxial structures used for the fabrication of SiC-based devices.

Original languageEnglish
Pages1-12
Number of pages12
Publication statusPublished - Dec 1 2005
Externally publishedYes
Event15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany
Duration: Sep 5 2005Sep 9 2005

Other

Other15th European Conference on Chemical Vapor Deposition, EUROCVD-15
CountryGermany
CityBochum
Period9/5/059/9/05

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Pons, M., Nishizawa, S., Wellmann, P., Ucar, M., Blanquet, E., Dedulle, J. M., ... Madar, R. (2005). Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics. 1-12. Paper presented at 15th European Conference on Chemical Vapor Deposition, EUROCVD-15, Bochum, Germany.