Numerical simulation of write-operation in a magnetic random access memory cell array with a magnetostatic interaction

Y. Nozaki, H. Terada, Kimihide Matsuyama

Research output: Contribution to journalArticle

Abstract

The margin for selective write-operation in a current coincident scheme has been numerically evaluated by considering a magnetostatic interaction in a magnetic random access memory cell array. For a conventional method, the margin over 20% cannot be achieved as the cell size is smaller than 0.2×0.4 μ m2. This is mainly attributed to the degradation of field localization created by a conductor current. The minimum cell size ensuring the practical margin can be decreased to 0.16×0.24 μ m2 by using an opposing current flowing through neighboring conductors. The margin is found to be remarkably decreased as a current pulse width becomes less than 0.4 ns because of a gyromagnetic effect.

Original languageEnglish
Article number10P505
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - May 15 2005

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random access memory
magnetostatics
margins
cells
conductors
simulation
interactions
pulse duration
degradation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Numerical simulation of write-operation in a magnetic random access memory cell array with a magnetostatic interaction. / Nozaki, Y.; Terada, H.; Matsuyama, Kimihide.

In: Journal of Applied Physics, Vol. 97, No. 10, 10P505, 15.05.2005.

Research output: Contribution to journalArticle

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