Numerical study of the relationship between growth condition and atomic arrangement of InGaN

Y. Kangawa; K. Kakimoto; T. Ito; A. Koukltu

doi:10.1002/pssb.200674742

Numerical study of the relationship between growth condition and atomic arrangement of InGaN

Y. Kangawa, K. Kakimoto, T. Ito, A. Koukltu

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Monte Carlo simulations of InGaN MOVPE were carried out to investigate the relationship between growth conditions and atomic arrangement in thin films grown on (0001) and (112̄0). In the case of small input partial pressures of indium, it was found that compositional instability was enhanced during the site exchanging process instead of the adsorption process. Moreover, it was found that compositional fluctuation in thin films grown on (112̄0) is smaller than that in thin films grown on (0001). This suggests that accumulated stress near the growth surface influences the compositional fluctuation.

Original language	English
Pages (from-to)	1784-1788
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	6
DOIs	https://doi.org/10.1002/pssb.200674742
Publication status	Published - Jun 1 2007

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Kangawa, Y., Kakimoto, K., Ito, T., & Koukltu, A. (2007). Numerical study of the relationship between growth condition and atomic arrangement of InGaN. Physica Status Solidi (B) Basic Research, 244(6), 1784-1788. https://doi.org/10.1002/pssb.200674742

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10.1002/pssb.200674742