Numerical study of the relationship between growth condition and atomic arrangement of InGaN

Monte Carlo simulations of InGaN MOVPE were carried out to investigate the relationship between growth conditions and atomic arrangement in thin films grown on (0001) and (112̄0). In the case of small input partial pressures of indium, it was found that compositional instability was enhanced during the site exchanging process instead of the adsorption process. Moreover, it was found that compositional fluctuation in thin films grown on (112̄0) is smaller than that in thin films grown on (0001). This suggests that accumulated stress near the growth surface influences the compositional fluctuation.