Observation of extremely high current densities on order of MA/cm 2 in copper phthalocyanine thin-film devices with submicron active areas

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Abstract

Using contact photolithography and electron-beam lithography techniques, we manufactured copper phthalocyanine thin-film devices with active areas ranging from 1,000,000 to 0.04 μm2 to investigate how much current can flow through these devices with the aim of fabricating electrically pumped organic laser diodes. From the results of our current density-voltage (J-V) measurements, we found that the device with the smallest active area of 0.04 μm2 on a silicon substrate exhibits an extremely high current density of 6,350,000 A/cm2 due to improved thermal management. The J-V characteristics of the devices are controlled by shallow-trap space-charge-limited current (SCLC), trap-free SCLC, and two-carrier injection current mechanisms over a wide range ot current densities between nA/cm 2 and MA/cm2.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number45-49
DOIs
Publication statusPublished - Dec 14 2007

Fingerprint

Thin film devices
high current
Current density
current density
Copper
Electric space charge
copper
Organic lasers
thin films
space charge
Electron beam lithography
traps
Photolithography
organic lasers
Temperature control
Semiconductor lasers
carrier injection
photolithography
Silicon
lithography

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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title = "Observation of extremely high current densities on order of MA/cm 2 in copper phthalocyanine thin-film devices with submicron active areas",
abstract = "Using contact photolithography and electron-beam lithography techniques, we manufactured copper phthalocyanine thin-film devices with active areas ranging from 1,000,000 to 0.04 μm2 to investigate how much current can flow through these devices with the aim of fabricating electrically pumped organic laser diodes. From the results of our current density-voltage (J-V) measurements, we found that the device with the smallest active area of 0.04 μm2 on a silicon substrate exhibits an extremely high current density of 6,350,000 A/cm2 due to improved thermal management. The J-V characteristics of the devices are controlled by shallow-trap space-charge-limited current (SCLC), trap-free SCLC, and two-carrier injection current mechanisms over a wide range ot current densities between nA/cm 2 and MA/cm2.",
author = "Toshinori Matsusima and Chihaya Adachi",
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AU - Matsusima, Toshinori

AU - Adachi, Chihaya

PY - 2007/12/14

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N2 - Using contact photolithography and electron-beam lithography techniques, we manufactured copper phthalocyanine thin-film devices with active areas ranging from 1,000,000 to 0.04 μm2 to investigate how much current can flow through these devices with the aim of fabricating electrically pumped organic laser diodes. From the results of our current density-voltage (J-V) measurements, we found that the device with the smallest active area of 0.04 μm2 on a silicon substrate exhibits an extremely high current density of 6,350,000 A/cm2 due to improved thermal management. The J-V characteristics of the devices are controlled by shallow-trap space-charge-limited current (SCLC), trap-free SCLC, and two-carrier injection current mechanisms over a wide range ot current densities between nA/cm 2 and MA/cm2.

AB - Using contact photolithography and electron-beam lithography techniques, we manufactured copper phthalocyanine thin-film devices with active areas ranging from 1,000,000 to 0.04 μm2 to investigate how much current can flow through these devices with the aim of fabricating electrically pumped organic laser diodes. From the results of our current density-voltage (J-V) measurements, we found that the device with the smallest active area of 0.04 μm2 on a silicon substrate exhibits an extremely high current density of 6,350,000 A/cm2 due to improved thermal management. The J-V characteristics of the devices are controlled by shallow-trap space-charge-limited current (SCLC), trap-free SCLC, and two-carrier injection current mechanisms over a wide range ot current densities between nA/cm 2 and MA/cm2.

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