Abstract
In challenging a direct observation of the vacancy in crystalline silicon, we have carried out low-temperature ultrasonic measurements down to 20 mK. The longitudinal elastic constants of non-doped and B-doped crystalline silicons, which were grown by a floating zone (FZ) method in commercial base, reveal the elastic softening proportional to the reciprocal temperature below 20 K. The applied magnetic fields turn the elastic softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T do not affect the elastic softening of the non-doped FZ silicon. We present a plausible scenario for this result. Namely the vacancy with the non-magnetic charge state V 0 in the non-doped silicon and the magnetic V + in the B-doped silicon is responsible for the low-temperature softening of the shear elastic constants (C 11 - C 12)/2 and C 44, which can be described in terms of the quadrupole susceptibility due to the Jahn-Teller effect.
| Original language | English |
|---|---|
| Article number | 044602 |
| Journal | journal of the physical society of japan |
| Volume | 75 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 1 2006 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Observation of low-temperature elastic softening due to vacancy in crystalline silicon. / Goto, Terutaka; Yamada-Kaneta, Hiroshi; Saito, Yasuhiro; Nemoto, Yuichi; Sato, Koji; Kakimoto, Koichi; Nakamura, Shintaro.
In: journal of the physical society of japan, Vol. 75, No. 4, 044602, 01.04.2006.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Observation of low-temperature elastic softening due to vacancy in crystalline silicon
AU - Goto, Terutaka
AU - Yamada-Kaneta, Hiroshi
AU - Saito, Yasuhiro
AU - Nemoto, Yuichi
AU - Sato, Koji
AU - Kakimoto, Koichi
AU - Nakamura, Shintaro
PY - 2006/4/1
Y1 - 2006/4/1
N2 - In challenging a direct observation of the vacancy in crystalline silicon, we have carried out low-temperature ultrasonic measurements down to 20 mK. The longitudinal elastic constants of non-doped and B-doped crystalline silicons, which were grown by a floating zone (FZ) method in commercial base, reveal the elastic softening proportional to the reciprocal temperature below 20 K. The applied magnetic fields turn the elastic softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T do not affect the elastic softening of the non-doped FZ silicon. We present a plausible scenario for this result. Namely the vacancy with the non-magnetic charge state V 0 in the non-doped silicon and the magnetic V + in the B-doped silicon is responsible for the low-temperature softening of the shear elastic constants (C 11 - C 12)/2 and C 44, which can be described in terms of the quadrupole susceptibility due to the Jahn-Teller effect.
AB - In challenging a direct observation of the vacancy in crystalline silicon, we have carried out low-temperature ultrasonic measurements down to 20 mK. The longitudinal elastic constants of non-doped and B-doped crystalline silicons, which were grown by a floating zone (FZ) method in commercial base, reveal the elastic softening proportional to the reciprocal temperature below 20 K. The applied magnetic fields turn the elastic softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T do not affect the elastic softening of the non-doped FZ silicon. We present a plausible scenario for this result. Namely the vacancy with the non-magnetic charge state V 0 in the non-doped silicon and the magnetic V + in the B-doped silicon is responsible for the low-temperature softening of the shear elastic constants (C 11 - C 12)/2 and C 44, which can be described in terms of the quadrupole susceptibility due to the Jahn-Teller effect.
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U2 - 10.1143/JPSJ.75.044602
DO - 10.1143/JPSJ.75.044602
M3 - Article
AN - SCOPUS:33645704192
VL - 75
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 4
M1 - 044602
ER -