Abstract
Erbium doped Ga2O3 thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga2O3:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga2O3 contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga2O3 as the host materials for Er3+ ions.
| Original language | English |
|---|---|
| Article number | 022107 |
| Journal | Applied Physics Letters |
| Volume | 109 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jul 11 2016 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices. / Chen, Zhengwei; Wang, Xu; Zhang, Fabi; Noda, Shinji; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Arita, Makoto; Guo, Qixin.
In: Applied Physics Letters, Vol. 109, No. 2, 022107, 11.07.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices
AU - Chen, Zhengwei
AU - Wang, Xu
AU - Zhang, Fabi
AU - Noda, Shinji
AU - Saito, Katsuhiko
AU - Tanaka, Tooru
AU - Nishio, Mitsuhiro
AU - Arita, Makoto
AU - Guo, Qixin
PY - 2016/7/11
Y1 - 2016/7/11
N2 - Erbium doped Ga2O3 thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga2O3:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga2O3 contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga2O3 as the host materials for Er3+ ions.
AB - Erbium doped Ga2O3 thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga2O3:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga2O3 contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga2O3 as the host materials for Er3+ ions.
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U2 - 10.1063/1.4958838
DO - 10.1063/1.4958838
M3 - Article
AN - SCOPUS:84978524798
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 2
M1 - 022107
ER -