Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices

Zhengwei Chen; Xu Wang; Fabi Zhang; Shinji Noda; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio; Makoto Arita; Qixin Guo

doi:10.1063/1.4958838

Observation of low voltage driven green emission from erbium doped Ga₂O₃ light-emitting devices

Zhengwei Chen, Xu Wang, Fabi Zhang, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Erbium doped Ga₂O₃ thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga₂O₃:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga₂O₃ contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga₂O₃ as the host materials for Er³⁺ ions.

Original language	English
Article number	022107
Journal	Applied Physics Letters
Volume	109
Issue number	2
DOIs	https://doi.org/10.1063/1.4958838
Publication status	Published - Jul 11 2016

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4958838

Cite this

@article{411b7c1c0c8b4b6da79e5f43beb266a3,

title = "Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices",

abstract = "Erbium doped Ga2O3 thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga2O3:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga2O3 contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga2O3 as the host materials for Er3+ ions.",

author = "Zhengwei Chen and Xu Wang and Fabi Zhang and Shinji Noda and Katsuhiko Saito and Tooru Tanaka and Mitsuhiro Nishio and Makoto Arita and Qixin Guo",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = jul,

day = "11",

doi = "10.1063/1.4958838",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices

AU - Chen, Zhengwei

AU - Wang, Xu

AU - Zhang, Fabi

AU - Noda, Shinji

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Nishio, Mitsuhiro

AU - Arita, Makoto

AU - Guo, Qixin

PY - 2016/7/11

Y1 - 2016/7/11

N2 - Erbium doped Ga2O3 thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga2O3:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga2O3 contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga2O3 as the host materials for Er3+ ions.

AB - Erbium doped Ga2O3 thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga2O3:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga2O3 contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga2O3 as the host materials for Er3+ ions.

UR - http://www.scopus.com/inward/record.url?scp=84978524798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978524798&partnerID=8YFLogxK

U2 - 10.1063/1.4958838

DO - 10.1063/1.4958838

M3 - Article

AN - SCOPUS:84978524798

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 022107

ER -

Observation of low voltage driven green emission from erbium doped Ga₂O₃ light-emitting devices

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this