Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

Yutaka Noguchi, Rieko Ueda, Tohru Kubota, Toshiya Kamikado, Shiyoshi Yokoyama, Takashi Nagase

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

Original languageEnglish
Pages (from-to)2762-2766
Number of pages5
JournalThin Solid Films
Volume516
Issue number9
DOIs
Publication statusPublished - Mar 3 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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