Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

Yutaka Noguchi, Rieko Ueda, Tohru Kubota, Toshiya Kamikado, Shiyoshi Yokoyama, Takashi Nagase

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

Original languageEnglish
Pages (from-to)2762-2766
Number of pages5
JournalThin Solid Films
Volume516
Issue number9
DOIs
Publication statusPublished - Mar 3 2008

Fingerprint

Electron tunneling
electron tunneling
Diamond
Diamonds
electrons
Metals
diamonds
Electrodes
electrodes
Electric potential
electric potential
metals
Temperature
temperature
Electron Transport
tetraphenylporphyrin

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions. / Noguchi, Yutaka; Ueda, Rieko; Kubota, Tohru; Kamikado, Toshiya; Yokoyama, Shiyoshi; Nagase, Takashi.

In: Thin Solid Films, Vol. 516, No. 9, 03.03.2008, p. 2762-2766.

Research output: Contribution to journalArticle

Noguchi, Yutaka ; Ueda, Rieko ; Kubota, Tohru ; Kamikado, Toshiya ; Yokoyama, Shiyoshi ; Nagase, Takashi. / Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions. In: Thin Solid Films. 2008 ; Vol. 516, No. 9. pp. 2762-2766.
@article{6c78cb4446754b468aaf11df3c78bb9d,
title = "Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions",
abstract = "We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.",
author = "Yutaka Noguchi and Rieko Ueda and Tohru Kubota and Toshiya Kamikado and Shiyoshi Yokoyama and Takashi Nagase",
year = "2008",
month = "3",
day = "3",
doi = "10.1016/j.tsf.2007.04.111",
language = "English",
volume = "516",
pages = "2762--2766",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "9",

}

TY - JOUR

T1 - Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

AU - Noguchi, Yutaka

AU - Ueda, Rieko

AU - Kubota, Tohru

AU - Kamikado, Toshiya

AU - Yokoyama, Shiyoshi

AU - Nagase, Takashi

PY - 2008/3/3

Y1 - 2008/3/3

N2 - We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

AB - We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H2BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes.

UR - http://www.scopus.com/inward/record.url?scp=39449128281&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39449128281&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.04.111

DO - 10.1016/j.tsf.2007.04.111

M3 - Article

AN - SCOPUS:39449128281

VL - 516

SP - 2762

EP - 2766

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 9

ER -