Observation of surface impurities in Pr0.1Ce0.9O 2-δ thin films following optical absorption relaxation measurements

S. R. Bishop, John William Richard Druce, J. J. Kim, J. Kilner, H. L. Tuller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The authors use SIMS measurements to examine the composition of a Pr 0.1Ce0.9O2-δ thin film following an oxygen surface exchange measurement via optical absorption relaxation. A significant concentration of impurities (Si, K, Na, and Ca) were observed to accumulate on the film surface, with a concentration profile extending approximately 60 nm into the film, following the high temperature measurements. This resulted in a significant decrease in the oxygen exchange coefficient, kex. Potential sources for the impurities are discussed.

Original languageEnglish
Title of host publicationSolid State Ionic Devices 9 - Ion Conducting Thin Films and Multilayers
Pages35-38
Number of pages4
Edition27
DOIs
Publication statusPublished - Dec 1 2012
Event9th Solid State Ionic Devices Sympsoium - 22nd ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number27
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th Solid State Ionic Devices Sympsoium - 22nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Bishop, S. R., Druce, J. W. R., Kim, J. J., Kilner, J., & Tuller, H. L. (2012). Observation of surface impurities in Pr0.1Ce0.9O 2-δ thin films following optical absorption relaxation measurements. In Solid State Ionic Devices 9 - Ion Conducting Thin Films and Multilayers (27 ed., pp. 35-38). (ECS Transactions; Vol. 50, No. 27). https://doi.org/10.1149/05027.0035ecst