Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy

S. Nakashima; T. Mitani; T. Tomita; T. Kato; S. Nishizawa; H. Okumura; H. Harima

doi:10.1103/PhysRevB.75.115321

Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy

S. Nakashima, T. Mitani, T. Tomita, T. Kato, S. Nishizawa, H. Okumura, H. Harima

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Backscattering Raman spectra of SiC polytype crystals with SiC{0001} polar faces have been measured using deep ultraviolet (DUV), UV, and visible (VIS) excitation sources. We have found that for DUV excitation the intensity profiles of zone-folded modes differ markedly for Si and C faces. This Raman spectral feature is attributed to the presence of nonpropagating phonon modes confined in the near-surface region. It is concluded that the surface-bound phonon modes created with DUV photon field extend over a region a few hundred nanometers in depth, and that the displacements of the phonon modes are anisotropic in the direction of the polar axis. This surface-orientation-dependent Raman spectrum can be used to identify the surface polarity of SiC polytypes.

Original language	English
Article number	115321
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	75
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.75.115321
Publication status	Published - Mar 23 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.75.115321

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title = "Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy",

abstract = "Backscattering Raman spectra of SiC polytype crystals with SiC{0001} polar faces have been measured using deep ultraviolet (DUV), UV, and visible (VIS) excitation sources. We have found that for DUV excitation the intensity profiles of zone-folded modes differ markedly for Si and C faces. This Raman spectral feature is attributed to the presence of nonpropagating phonon modes confined in the near-surface region. It is concluded that the surface-bound phonon modes created with DUV photon field extend over a region a few hundred nanometers in depth, and that the displacements of the phonon modes are anisotropic in the direction of the polar axis. This surface-orientation-dependent Raman spectrum can be used to identify the surface polarity of SiC polytypes.",

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year = "2007",

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T1 - Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy

AU - Nakashima, S.

AU - Mitani, T.

AU - Tomita, T.

AU - Kato, T.

AU - Nishizawa, S.

AU - Okumura, H.

AU - Harima, H.

PY - 2007/3/23

Y1 - 2007/3/23

N2 - Backscattering Raman spectra of SiC polytype crystals with SiC{0001} polar faces have been measured using deep ultraviolet (DUV), UV, and visible (VIS) excitation sources. We have found that for DUV excitation the intensity profiles of zone-folded modes differ markedly for Si and C faces. This Raman spectral feature is attributed to the presence of nonpropagating phonon modes confined in the near-surface region. It is concluded that the surface-bound phonon modes created with DUV photon field extend over a region a few hundred nanometers in depth, and that the displacements of the phonon modes are anisotropic in the direction of the polar axis. This surface-orientation-dependent Raman spectrum can be used to identify the surface polarity of SiC polytypes.

AB - Backscattering Raman spectra of SiC polytype crystals with SiC{0001} polar faces have been measured using deep ultraviolet (DUV), UV, and visible (VIS) excitation sources. We have found that for DUV excitation the intensity profiles of zone-folded modes differ markedly for Si and C faces. This Raman spectral feature is attributed to the presence of nonpropagating phonon modes confined in the near-surface region. It is concluded that the surface-bound phonon modes created with DUV photon field extend over a region a few hundred nanometers in depth, and that the displacements of the phonon modes are anisotropic in the direction of the polar axis. This surface-orientation-dependent Raman spectrum can be used to identify the surface polarity of SiC polytypes.

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