TY - JOUR
T1 - Observation of the Pinch-Off Effect during Electrostatically Gating the Metal-Insulator Transition
AU - Yajima, Takeaki
AU - Toriumi, Akira
N1 - Funding Information:
The authors thank Dr. Isao Inoue in The National Institute of Advanced Industrial Science and Technology, Japan, Dr. Yusuke Kozuka in National Institute of Materials Science, Japan, and Prof. Ken Uchida and Prof. Takahisa Tanaka in The University of Tokyo, Japan for the scientific discussion. This research was supported by JSPS KAKENHI 20H02615, and was partially supported by JSPS KAKENHI 18H03686.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021
Y1 - 2021
N2 - Electrostatically controlling material phases has been a long-standing challenge. While it is partially achieved by electrostatic gating with ionic liquid, it often involves unintended chemical reactions. In this sense, it has recently attracted tremendous attention that a solid-state electrostatic gating is successfully applied to insulator-metal transition by using ultrahigh-permittivity gate dielectrics. However, the detailed characteristics of this new class of device are totally unknown. Here, systematic studies are performed on the three-terminal device using VO2 insulator-metal transition and TiO2 gate dielectrics, and for the first time the pinch-off effect in phase transition devices is observed, a clear sign of electrostatic gating. Furthermore, the increase in the drain voltage has a “catalytic effect” of drastically sharpening the gate-induced transition, demonstrating a 0.1 V gate control. The characteristics are simulated by a quasi-equilibrium model, providing the firm ground for electrical control of material phases with high speed and high resolution.
AB - Electrostatically controlling material phases has been a long-standing challenge. While it is partially achieved by electrostatic gating with ionic liquid, it often involves unintended chemical reactions. In this sense, it has recently attracted tremendous attention that a solid-state electrostatic gating is successfully applied to insulator-metal transition by using ultrahigh-permittivity gate dielectrics. However, the detailed characteristics of this new class of device are totally unknown. Here, systematic studies are performed on the three-terminal device using VO2 insulator-metal transition and TiO2 gate dielectrics, and for the first time the pinch-off effect in phase transition devices is observed, a clear sign of electrostatic gating. Furthermore, the increase in the drain voltage has a “catalytic effect” of drastically sharpening the gate-induced transition, demonstrating a 0.1 V gate control. The characteristics are simulated by a quasi-equilibrium model, providing the firm ground for electrical control of material phases with high speed and high resolution.
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U2 - 10.1002/aelm.202100842
DO - 10.1002/aelm.202100842
M3 - Article
AN - SCOPUS:85119528387
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
ER -