Observation of the stark effect in GaAs/AlGaAs coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation

Y. Kato, Y. Takahashi, S. Fukatsu, Y. Shiraki, R. Ito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The quantum-confined Stark effect (QCSE) has been studied in electroluminescence (EL) spectra by using GaAs/Al0.3Gag0.7As symmetric coupled double-quantum-well (CDQW) structures under a 'forward' electric field. The Stark shift for the transition between the ground electron state nad heavy-hole state was successfully observed, and was found to be symmetrical with regard to the flat-band bias for EL and photoluminescence(PL), in which the electric field was applied in the forward and reverse directions, respectively.

Original languageEnglish
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages501-506
Number of pages6
ISBN (Print)1558992251
Publication statusPublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Observation of the stark effect in GaAs/AlGaAs coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation'. Together they form a unique fingerprint.

  • Cite this

    Kato, Y., Takahashi, Y., Fukatsu, S., Shiraki, Y., & Ito, R. (1994). Observation of the stark effect in GaAs/AlGaAs coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation. In Growth, Processing, and Characterization of Semiconductor Heterostructures (pp. 501-506). (Materials Research Society Symposium Proceedings; Vol. 326). Publ by Materials Research Society.