Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements

Terutaka Goto, Hiroshi Yamada-Kaneta, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


We have succeeded in direct observation of isolated vacancies in high purity silicon crystals grown by a floating zone (FZ) method using low-temperature ultrasonic measurements. The softening of elastic constants below 20 K down to 20 mK is observed in nondoped FZ silicon and B-doped FZ silicon. This softening is caused by an interaction of electric quadrupoles of triply degenerate vacancy orbital to elastic strains of ultrasonic waves. The lowtemperature elastic softening measured by ultrasonic methods verifies existence of the isolated vacancies in Pv-region distributed in pure crystal of a Czockralski ingot. The ultrasonic measurement of the low-temperature softening is a faithful probe for vacancy evaluation in high purity silicon crystals in commercial base. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)375-385
Number of pages11
JournalECS Transactions
Issue number4
Publication statusPublished - 2006
EventHigh Purity Silicon 9 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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