TY - JOUR
T1 - Ohmic contact properties depending on AlGaN layer thickness for AlGaN/GaN high electron mobility transistor structures
AU - Takei, Yusuke
AU - Okamoto, Mari
AU - Saito, Wataru
AU - Tsutsui, Kazuo
AU - Kakushima, Kuniyuki
AU - Wakabayashi, Hitoshi
AU - Kataoka, Yoshinori
AU - Iwai, Hiroshi
N1 - Publisher Copyright:
© 2014 by The Electrochemical Society. All rights reserved.
PY - 2014
Y1 - 2014
N2 - Mo/Al/Ti or TiN/TiSi2 ohmic contacts were fabricated on AlGaN/GaN HEMT structures having various thicknesses of AlGaN layers. Optimum thicknesses depending on annealing temperature were found, which should be correlated with the contact formation mechanism.
AB - Mo/Al/Ti or TiN/TiSi2 ohmic contacts were fabricated on AlGaN/GaN HEMT structures having various thicknesses of AlGaN layers. Optimum thicknesses depending on annealing temperature were found, which should be correlated with the contact formation mechanism.
UR - http://www.scopus.com/inward/record.url?scp=84925089263&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84925089263&partnerID=8YFLogxK
U2 - 10.1149/06104.0265ecst
DO - 10.1149/06104.0265ecst
M3 - Conference article
AN - SCOPUS:84925089263
SN - 1938-5862
VL - 61
SP - 265
EP - 270
JO - ECS Transactions
JF - ECS Transactions
IS - 4
T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting
Y2 - 11 May 2014 through 15 May 2014
ER -