Ohmic contact properties depending on AlGaN layer thickness for AlGaN/GaN high electron mobility transistor structures

Yusuke Takei, Mari Okamoto, Wataru Saito, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai

Research output: Contribution to journalConference article


Mo/Al/Ti or TiN/TiSi2 ohmic contacts were fabricated on AlGaN/GaN HEMT structures having various thicknesses of AlGaN layers. Optimum thicknesses depending on annealing temperature were found, which should be correlated with the contact formation mechanism.

Original languageEnglish
Pages (from-to)265-270
Number of pages6
JournalECS Transactions
Issue number4
Publication statusPublished - Jan 1 2014
Externally publishedYes
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: May 11 2014May 15 2014


All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this