Ohmic contact properties depending on AlGaN layer thickness for AlGaN/GaN high electron mobility transistor structures

Yusuke Takei, Mari Okamoto, Wataru Saito, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

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Engineering & Materials Science