ハイパス特性を持ったUWB-IRトランスミッタ用CMOSオンチップバランの開発

Translated title of the contribution: On-Chip Balun with High Pass Characteristic in CMOS Technology for UWB-IR Transmitter

橋村 亮介, ルイビン ドン, ラメシュ ポカレル, 兼本 大輔, 金谷 晴一, 吉田 啓二

Research output: Contribution to journalArticle

Abstract

This paper presents on-chip balun with capacitors connected in series (BCCS) which is used for designing Ultra Wideband Impulse Radio (UWB-IR) transmitter. UWB signal is strictly limited especially between 0.96-1.61GHz to avoid interfering with GPS by Federal Communications Commission (FCC). BCCS has high-pass characteristic, and attenuates the power spectral density (PSD) of UWB signal within low frequency band. Hence, BCCS is very suitable for designing UWB-IR transmitter. BCCS is fabricated in 0.18μm CMOS technology and tested, and the effectiveness for high-pass characteristic is confirmed.
Translated title of the contributionOn-Chip Balun with High Pass Characteristic in CMOS Technology for UWB-IR Transmitter
Original languageJapanese
Pages (from-to)59-64
Number of pages6
JournalIEICE technical report
Volume112
Issue number251
Publication statusPublished - Oct 11 2012

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