On phonon confinement effects and free carrier concentration in GaN quantum dots

M. Kuball, J. Gleize, Satoru Tanaka, Y. Aoyagi

Research output: Contribution to journalArticle

Abstract

Self-assembled GaN quantum dots (QDs) grown on Al0.15Ga0.85N using Si as anti-surfactant were investigated by resonant Raman scattering. Phonons of GaN QDs of different sizes were probed selectively by using laser excitation energies of 3.53 and 5.08 eV. Phonon confinement effects were evidenced in GaN QDs of 2-3 nm height. Resonant Raman scattering on GaN grown on Al0.23Ga0.77N after the deposition of an increasing amount of Si anti-surfactant, i.e., the morphological transition from a GaN quantum well (2D) to GaN quantum dots (0D), was also investigated.

Original languageEnglish
Pages (from-to)195-198
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number1
DOIs
Publication statusPublished - Nov 1 2001
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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