On the nucleation of graphene by chemical vapor deposition

Baoshan Hu, Hiroki Ago, Carlo M. Orofeo, Yui Ogawa, Masaharu Tsuji

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    We demonstrate that homogeneous single-layer graphene can be grown by simply annealing crystalline Cu(111)/c-plane sapphire (α-Al 2O3) at 900 and 1000 °C without additional carbon supply. The resulting graphene film shows a high carrier mobility of 1210 cm2 V-1 s-1. However, the annealing at a lower temperature of 800 °C gives an amorphous carbon film. Further investigations indicate that graphitization of amorphous carbon and/or adsorbed carbon atoms during chemical vapour deposition (CVD) is not simply a consequence of carbon supersaturation, it is also affected by CVD temperature, and crystallographic plane of the underlying metal, which are essentially correlated to the energy barrier of nucleation. Our results provide the direct experimental evidence to elucidate the influencing factors of graphitization of amorphous carbon, and contribute fundamental insight into the nucleation and growth of graphene to improve its quality for applications.

    Original languageEnglish
    Pages (from-to)73-77
    Number of pages5
    JournalNew Journal of Chemistry
    Volume36
    Issue number1
    DOIs
    Publication statusPublished - Jan 2012

    All Science Journal Classification (ASJC) codes

    • Catalysis
    • Chemistry(all)
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'On the nucleation of graphene by chemical vapor deposition'. Together they form a unique fingerprint.

    Cite this