Abstract
It is assumed that an interstitial phosphorus atom and a self-interstitial, Pi and I, are of the interstitialcy type. One bond-type migration is applied to their migration. It is concluded that there is essentially no difference between the migrations of a P-I pair, (PI), and Pi by the interstitialcy mechanism and between the chemical processes for the formation-dissociation of (PI) and the kick-out mechanism of Pi.
| Original language | English |
|---|---|
| Pages (from-to) | 6376-6377 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 37 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1998 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Yoshida, M., Kamiura, Y., Tsuruno, R., Takahashi, M., & Tomokage, H. (1998). One bond-type migration of phosphorus in silicon by interstitialcy mechanism. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37(12), 6376-6377. https://doi.org/10.1143/jjap.37.6376