One bond-type migration of phosphorus in silicon by interstitialcy mechanism

Masayuki Yoshida, Yoichi Kamiura, Reiji Tsuruno, Manabu Takahashi, Hajime Tomokage

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

It is assumed that an interstitial phosphorus atom and a self-interstitial, Pi and I, are of the interstitialcy type. One bond-type migration is applied to their migration. It is concluded that there is essentially no difference between the migrations of a P-I pair, (PI), and Pi by the interstitialcy mechanism and between the chemical processes for the formation-dissociation of (PI) and the kick-out mechanism of Pi.

Original languageEnglish
Pages (from-to)6376-6377
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number12
Publication statusPublished - Dec 1 1998

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phosphorus
Phosphorus
Silicon
Atoms
interstitials
silicon
dissociation
atoms

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

One bond-type migration of phosphorus in silicon by interstitialcy mechanism. / Yoshida, Masayuki; Kamiura, Yoichi; Tsuruno, Reiji; Takahashi, Manabu; Tomokage, Hajime.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 12, 01.12.1998, p. 6376-6377.

Research output: Contribution to journalArticle

Yoshida, Masayuki ; Kamiura, Yoichi ; Tsuruno, Reiji ; Takahashi, Manabu ; Tomokage, Hajime. / One bond-type migration of phosphorus in silicon by interstitialcy mechanism. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1998 ; Vol. 37, No. 12. pp. 6376-6377.
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