One bond-type migration of phosphorus in silicon by interstitialcy mechanism

Masayuki Yoshida; Yoichi Kamiura; Reiji Tsuruno; Manabu Takahashi; Hajime Tomokage

doi:10.1143/jjap.37.6376

One bond-type migration of phosphorus in silicon by interstitialcy mechanism

Masayuki Yoshida, Yoichi Kamiura, Reiji Tsuruno, Manabu Takahashi, Hajime Tomokage

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Abstract

It is assumed that an interstitial phosphorus atom and a self-interstitial, P_i and I, are of the interstitialcy type. One bond-type migration is applied to their migration. It is concluded that there is essentially no difference between the migrations of a P-I pair, (PI), and P_i by the interstitialcy mechanism and between the chemical processes for the formation-dissociation of (PI) and the kick-out mechanism of P_i.

Original language	English
Pages (from-to)	6376-6377
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	12
DOIs	https://doi.org/10.1143/jjap.37.6376
Publication status	Published - Dec 1998

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.37.6376

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One bond-type migration of phosphorus in silicon by interstitialcy mechanism. / Yoshida, Masayuki; Kamiura, Yoichi; Tsuruno, Reiji; Takahashi, Manabu; Tomokage, Hajime.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 12, 12.1998, p. 6376-6377.

Research output: Contribution to journal › Article › peer-review

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AU - Tomokage, Hajime

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ER -

One bond-type migration of phosphorus in silicon by interstitialcy mechanism

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