Bi2Te3 nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi 2Te3 sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.
|Number of pages||5|
|Journal||Angewandte Chemie - International Edition|
|Publication status||Published - Oct 24 2011|
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