One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness

Yimin Zhao; Robert W. Hughes; Zixue Su; Wuzong Zhou; Duncan H. Gregory

doi:10.1002/anie.201104299

One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness

Yimin Zhao, Robert W. Hughes, Zixue Su, Wuzong Zhou, Duncan H. Gregory

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

Bi₂Te₃ nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi ₂Te₃ sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.

Original language	English
Pages (from-to)	10397-10401
Number of pages	5
Journal	Angewandte Chemie - International Edition
Volume	50
Issue number	44
DOIs	https://doi.org/10.1002/anie.201104299
Publication status	Published - Oct 24 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Catalysis
Chemistry(all)

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10.1002/anie.201104299

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abstract = "Bi2Te3 nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi 2Te3 sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.",

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AU - Su, Zixue

AU - Zhou, Wuzong

AU - Gregory, Duncan H.

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AB - Bi2Te3 nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi 2Te3 sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.

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One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness

Abstract

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