One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness

Yimin Zhao, Robert W. Hughes, Zixue Su, Wuzong Zhou, Duncan H. Gregory

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

Bi2Te3 nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi 2Te3 sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.

Original languageEnglish
Pages (from-to)10397-10401
Number of pages5
JournalAngewandte Chemie - International Edition
Volume50
Issue number44
DOIs
Publication statusPublished - Oct 24 2011
Externally publishedYes

Fingerprint

Nanosheets
Bismuth
Vapors
Atoms
Substrates
bismuth telluride

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)

Cite this

One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness. / Zhao, Yimin; Hughes, Robert W.; Su, Zixue; Zhou, Wuzong; Gregory, Duncan H.

In: Angewandte Chemie - International Edition, Vol. 50, No. 44, 24.10.2011, p. 10397-10401.

Research output: Contribution to journalArticle

Zhao, Yimin ; Hughes, Robert W. ; Su, Zixue ; Zhou, Wuzong ; Gregory, Duncan H. / One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness. In: Angewandte Chemie - International Edition. 2011 ; Vol. 50, No. 44. pp. 10397-10401.
@article{0d202448a9864725bdd5f56345751fd4,
title = "One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness",
abstract = "Bi2Te3 nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi 2Te3 sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.",
author = "Yimin Zhao and Hughes, {Robert W.} and Zixue Su and Wuzong Zhou and Gregory, {Duncan H.}",
year = "2011",
month = "10",
day = "24",
doi = "10.1002/anie.201104299",
language = "English",
volume = "50",
pages = "10397--10401",
journal = "Angewandte Chemie - International Edition",
issn = "1433-7851",
publisher = "John Wiley and Sons Ltd",
number = "44",

}

TY - JOUR

T1 - One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness

AU - Zhao, Yimin

AU - Hughes, Robert W.

AU - Su, Zixue

AU - Zhou, Wuzong

AU - Gregory, Duncan H.

PY - 2011/10/24

Y1 - 2011/10/24

N2 - Bi2Te3 nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi 2Te3 sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.

AB - Bi2Te3 nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi 2Te3 sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.

UR - http://www.scopus.com/inward/record.url?scp=80054991416&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054991416&partnerID=8YFLogxK

U2 - 10.1002/anie.201104299

DO - 10.1002/anie.201104299

M3 - Article

C2 - 21915974

AN - SCOPUS:80054991416

VL - 50

SP - 10397

EP - 10401

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

SN - 1433-7851

IS - 44

ER -