Fast recovery characteristics can be obtained in SiGe/Si/Si pin diodes compared to conventional Si pin diodes without any intentional lifetime controls into the i-layers. In the present pin diodes, the tradeoff between the fast recovery and the low forward voltage drop, which is inherent in the conventional pin diodes, can be effectively eliminated. The present diodes allow low power dissipation with fast operation in the switching circuits. The ID device simulation suggests that the thin SiGe p-layer with a suppressed minority carrier lifetime enhances the diffusion current in the SiGe pin diode, where the stored minority carrier effectively decreases in the Si i-layer.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2005|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering