Operation of major line bubble propagation path for bloch line memory

K. Matsuyama, K. Chikamatsu, S. Tanaka, T. Suzuki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new type of current access bubble propagation path for the major line of vertical Bloch line memory has been designed and processed on a standard as-grown 5 um bubble garnet film, but having the film thickness of 2.1 um. The bubble propagation path consists of a meandering conductor and high coercive force hard magnetic patterns of CoPt, providing an offset force for the bubble motion. A reasonable bias field margin (14% of mid bias field value) for the bubble propagation was measured in a test chip. The bias field compatibility between bubbles on the major line bubble propagation path and confined stripe domains for minor loop has been confirmed experimentally.

Original languageEnglish
Pages (from-to)4248-4250
Number of pages3
JournalIEEE Transactions on Magnetics
Volume25
Issue number5
DOIs
Publication statusPublished - Sep 1989

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Garnets
Coercive force
Film thickness
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Operation of major line bubble propagation path for bloch line memory. / Matsuyama, K.; Chikamatsu, K.; Tanaka, S.; Suzuki, T.

In: IEEE Transactions on Magnetics, Vol. 25, No. 5, 09.1989, p. 4248-4250.

Research output: Contribution to journalArticle

Matsuyama, K. ; Chikamatsu, K. ; Tanaka, S. ; Suzuki, T. / Operation of major line bubble propagation path for bloch line memory. In: IEEE Transactions on Magnetics. 1989 ; Vol. 25, No. 5. pp. 4248-4250.
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