A new type of current access bubble propagation path for the major line of vertical Bloch line memory has been designed and processed on a standard as-grown 5 um bubble garnet film, but having the film thickness of 2.1 um. The bubble propagation path consists of a meandering conductor and high coercive force hard magnetic patterns of CoPt, providing an offset force for the bubble motion. A reasonable bias field margin (14% of mid bias field value) for the bubble propagation was measured in a test chip. The bias field compatibility between bubbles on the major line bubble propagation path and confined stripe domains for minor loop has been confirmed experimentally.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering