Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

Research output: Contribution to journalArticle

Abstract

A thin-film thermoelectric generator composed of p- and n-type poly-Ge1-xSnx (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1-xSnx enabled a relatively high power factor (9.2 μ Wcm-1 K-2 at RT), which is comparable to the counterparts of n-type Ge1-xSnx layers epitaxially grown on InP(001).

Original languageEnglish
Article number051016
JournalApplied Physics Express
Volume12
Issue number5
DOIs
Publication statusPublished - Jan 1 2019

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thermoelectric generators
budgets
Chemical activation
activation
Thin films
Laser beam effects
thin films
ultraviolet lasers
pulsed lasers
Crystallization
Doping (additives)
crystallization
irradiation
water
Water
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process. / Takahashi, Kouta; Ikenoue, Hiroshi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki; Kurosawa, Masashi.

In: Applied Physics Express, Vol. 12, No. 5, 051016, 01.01.2019.

Research output: Contribution to journalArticle

Takahashi, Kouta ; Ikenoue, Hiroshi ; Sakashita, Mitsuo ; Nakatsuka, Osamu ; Zaima, Shigeaki ; Kurosawa, Masashi. / Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process. In: Applied Physics Express. 2019 ; Vol. 12, No. 5.
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