Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A thin-film thermoelectric generator composed of p- and n-type poly-Ge1-xSnx (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1-xSnx enabled a relatively high power factor (9.2 μ Wcm-1 K-2 at RT), which is comparable to the counterparts of n-type Ge1-xSnx layers epitaxially grown on InP(001).

Original languageEnglish
Article number051016
JournalApplied Physics Express
Volume12
Issue number5
DOIs
Publication statusPublished - May 1 2019

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Operation of thin-film thermoelectric generator of Ge-rich poly-Ge<sub>1-x</sub>Sn<sub>x</sub> on SiO<sub>2</sub> fabricated by a low thermal budget process'. Together they form a unique fingerprint.

Cite this