Optical and electrical characterizations of defects in SiGe-On-InsuIator

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Abstract

In this work, we characterized defects in SiGe-On-Insulator (SGOI) and Ge-On-Insulator (GOI) by optical and electrical methods. All the SGOI and GOI substrates in this work were fabricated using Ge condensation by dry oxidation method. Defect generation and transformation during the temperature ramp-up process of Ge condensation were clarified by photoluminescence. The location of main defect levels were determined to be above mid-gap by back-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) current deep-level-transient-spectroscopy and dual-metal-oxide-semiconductor thermally stimulated capacitance. The defects in fabricated SGOI and GOI were directly observed by transmission-electron-microscopy. These defects unintentionally induced high hole concentration in SGOI and GOI. The dependence of energy level position on Ge fraction was investigated in detail for the defect-related acceptor levels by Hall effect and back-gate MOSFET drain current vs. gate bias voltage. The suppressions of defects by post-Al-deposition-annealing and forming gas annealing were also discussed.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
Pages99-114
Number of pages16
Volume25
Edition7
DOIs
Publication statusPublished - Dec 1 2009
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period10/4/0910/9/09

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Nakashima, H., Wang, D., & Yang, H. (2009). Optical and electrical characterizations of defects in SiGe-On-InsuIator. In ECS Transactions - ULSI Process Integration 6 (7 ed., Vol. 25, pp. 99-114) https://doi.org/10.1149/1.3203947