We demonstrate that bis(4-(phenylethynyl)phenyl)ethynes (BPEPEs) have high potential as organic field-effect transistors (FETs). We observed a p-type transistor operation in FETs with BPEPE derivatives having electron-donating substituents. The devices showed FET hole mobilities in the range of μh = 10-3-10-5 cm2/(V s), depending on the substituents. Further, bis(4(4-trifluoromethvlphenvlethynyl)phenyl)ethyne (4-CF3-BPEPE), which has an electron-withdrawing group, indicated n-type operation.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - Dec 1 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)