Optical and electrical properties of layer semiconductor p-GaSe doped with Zn

S. Shigetomi, T. Ikari, H. Nakashima

    Research output: Contribution to journalArticle

    44 Citations (Scopus)

    Abstract

    Zinc (Zn) is doped into GaSe single crystals grown by the Bridgman technique in a wide range from 0.005 to 0.5 at. % to the stoichiometric melt. Radiative recombination mechanisms have been investigated by using photoluminescence (PL) measurements. The PL spectra in Zn-doped samples at 77 K are dominated by three emission bands at 1.75, 1.63, and 1.27 eV. The 1.63 and 1.27 eV emission bands are enhanced with the increase in the amount of Zn. In addition to the results of Hall effect measurements, it is found that the 1.63 and 1.27 eV emission bands are associated with the acceptor levels at 0.12 and 0.3 eV above the valence band, respectively. For the 1.27 eV emission band, the temperature dependences of the PL intensity, peak energy, and half-width are characterized by the configurational coordinate model.

    Original languageEnglish
    Pages (from-to)4125-4129
    Number of pages5
    JournalJournal of Applied Physics
    Volume74
    Issue number6
    DOIs
    Publication statusPublished - Dec 1 1993

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

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