Abstract
Semiconductor nanoparticles have significant potential for optoelectronic applications such as solar cells and light-emitting diodes. We are developing semiconductor nanoparticle composite films with a wide bandgap to be used as the window layer of solar cells because the bandgap energy increases with a decrease in the size of particles in the nanometer size range due to the quantum size effect. A multi-hollow discharge plasma chemical vapor deposition (CVD) method was used to fabricate Si nanoparticle composite films and control the volume fraction of nanoparticles in the films. The bandgap energy was increased from 2 eV for a crystalline volume fraction Xc of 0.2 to 2.5 eV for Xc = 0.6 and then decreased to 1.1 eV for Xc = 1. The photo and dark conductivity of films indicate high stability against light soaking. Si nanoparticle composite films with bandgap energies above 2.2 eV are thus promising candidate materials for the window layer of thin-film solar cells.
| Original language | English |
|---|---|
| Pages (from-to) | 10753-10757 |
| Number of pages | 5 |
| Journal | Journal of nanoscience and nanotechnology |
| Volume | 16 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 1 2016 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
Cite this
Optical bandgap energy of Si nanoparticle composite films deposited by a multi-hollow discharge plasma chemical vapor deposition method. / Toko, Susumu; Kanemitsu, Yoshinori; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.
In: Journal of nanoscience and nanotechnology, Vol. 16, No. 10, 01.10.2016, p. 10753-10757.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optical bandgap energy of Si nanoparticle composite films deposited by a multi-hollow discharge plasma chemical vapor deposition method
AU - Toko, Susumu
AU - Kanemitsu, Yoshinori
AU - Seo, Hyunwoong
AU - Itagaki, Naho
AU - Koga, Kazunori
AU - Shiratani, Masaharu
PY - 2016/10/1
Y1 - 2016/10/1
N2 - Semiconductor nanoparticles have significant potential for optoelectronic applications such as solar cells and light-emitting diodes. We are developing semiconductor nanoparticle composite films with a wide bandgap to be used as the window layer of solar cells because the bandgap energy increases with a decrease in the size of particles in the nanometer size range due to the quantum size effect. A multi-hollow discharge plasma chemical vapor deposition (CVD) method was used to fabricate Si nanoparticle composite films and control the volume fraction of nanoparticles in the films. The bandgap energy was increased from 2 eV for a crystalline volume fraction Xc of 0.2 to 2.5 eV for Xc = 0.6 and then decreased to 1.1 eV for Xc = 1. The photo and dark conductivity of films indicate high stability against light soaking. Si nanoparticle composite films with bandgap energies above 2.2 eV are thus promising candidate materials for the window layer of thin-film solar cells.
AB - Semiconductor nanoparticles have significant potential for optoelectronic applications such as solar cells and light-emitting diodes. We are developing semiconductor nanoparticle composite films with a wide bandgap to be used as the window layer of solar cells because the bandgap energy increases with a decrease in the size of particles in the nanometer size range due to the quantum size effect. A multi-hollow discharge plasma chemical vapor deposition (CVD) method was used to fabricate Si nanoparticle composite films and control the volume fraction of nanoparticles in the films. The bandgap energy was increased from 2 eV for a crystalline volume fraction Xc of 0.2 to 2.5 eV for Xc = 0.6 and then decreased to 1.1 eV for Xc = 1. The photo and dark conductivity of films indicate high stability against light soaking. Si nanoparticle composite films with bandgap energies above 2.2 eV are thus promising candidate materials for the window layer of thin-film solar cells.
UR - http://www.scopus.com/inward/record.url?scp=84990929729&partnerID=8YFLogxK
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U2 - 10.1166/jnn.2016.13233
DO - 10.1166/jnn.2016.13233
M3 - Article
AN - SCOPUS:84990929729
VL - 16
SP - 10753
EP - 10757
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 10
ER -