Optical characterization of the "E2" deep level in GaN

P. Hacke, P. Ramvall, S. Tanaka, Y. Aoyagi, A. Kuramata, K. Horino, H. Munekata

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20 Citations (Scopus)


The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck-Condon parameter, dFC=0.30 eV at 90 K.

Original languageEnglish
Pages (from-to)543-545
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - Jan 25 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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