Optical characterization of the "E2" deep level in GaN

P. Hacke, P. Ramvall, S. Tanaka, Y. Aoyagi, A. Kuramata, K. Horino, H. Munekata

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck-Condon parameter, dFC=0.30 eV at 90 K.

Original languageEnglish
Pages (from-to)543-545
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number4
DOIs
Publication statusPublished - Jan 25 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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