Optical charaterization of Ag/Ga composition ratio in AgGaSe2 thin film

Hitoshi Matsuo, Takahiro Tokuda, Kenji Yoshino, Aya Kinoshita, Tetsuo Ikari, Koichi Kakimoto, Satoru Seto

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

AgGaSe2 thin films, changing the Ag/Ga ratio from 0.4 to 1.5, on glass substrates were successfully grown by vacuum evaporation method. Fundamental absorption bandedges were clearly observed except for Ag/Ga ratios of 0.4 and 1.5 in the optical transmittance spectra at RT. The optical bandgap in-creased with increasing Ag/Ga ratio. This was due to the Bernstein-Moss shifts. Photoluminescence spectrum was strongly observed in the stoichiometric sample in comparison to Ag- and Ga-rich samples. This means that nonradiative re-combination transition was a few in the stoichiometric sample because there were few defects in the samples Two distinct peaks at 1.77 and 1.70 eV were clearly observed in the stoichiometric sample. They were due to bound exciton emis-sion and donor-acceptor pair (DAP) emission, respectively. The DAP emission is due to recombination between Se- and Ga vacancies.

Original languageEnglish
Pages (from-to)1070-1073
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number5
DOIs
Publication statusPublished - Sep 30 2009
Externally publishedYes
Event16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany
Duration: Sep 15 2008Sep 19 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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