AgGaSe2 thin films, changing the Ag/Ga ratio from 0.4 to 1.5, on glass substrates were successfully grown by vacuum evaporation method. Fundamental absorption bandedges were clearly observed except for Ag/Ga ratios of 0.4 and 1.5 in the optical transmittance spectra at RT. The optical bandgap in-creased with increasing Ag/Ga ratio. This was due to the Bernstein-Moss shifts. Photoluminescence spectrum was strongly observed in the stoichiometric sample in comparison to Ag- and Ga-rich samples. This means that nonradiative re-combination transition was a few in the stoichiometric sample because there were few defects in the samples Two distinct peaks at 1.77 and 1.70 eV were clearly observed in the stoichiometric sample. They were due to bound exciton emis-sion and donor-acceptor pair (DAP) emission, respectively. The DAP emission is due to recombination between Se- and Ga vacancies.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Sep 30 2009|
|Event||16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany|
Duration: Sep 15 2008 → Sep 19 2008
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics