Optical emission spectroscopic study on H-assisted plasma for anisotropic deposition of Cu films

Jun Umetsu, Kazuhiko Inoue, Kazunori Koga, Masaharu Shiratani

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1 Citation (Scopus)

Abstract

We have studied dependence of Ha intensity and electron density on the discharge power and gas flow rate ratio R = H2/(H2 + Ar), to obtain information on a discharge condition bringing about a high H flux to film surfaces, because irradiation of H atoms on surfaces removes impurities in films and enhances the deposition rate. The highest Ha intensity, which is obtained for the discharge power of 500 W and R=3.3%, is 10 times as high as that for previous deposition condition of the discharge power of 150 W and R=11%. Moreover emission spectra suggest Ar metastable contribute to H generation for R=3.3-33%.

Original languageEnglish
Article number062007
JournalJournal of Physics: Conference Series
Volume100
Issue numberPART 6
DOIs
Publication statusPublished - Mar 1 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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