We have studied dependence of Ha intensity and electron density on the discharge power and gas flow rate ratio R = H2/(H2 + Ar), to obtain information on a discharge condition bringing about a high H flux to film surfaces, because irradiation of H atoms on surfaces removes impurities in films and enhances the deposition rate. The highest Ha intensity, which is obtained for the discharge power of 500 W and R=3.3%, is 10 times as high as that for previous deposition condition of the discharge power of 150 W and R=11%. Moreover emission spectra suggest Ar metastable contribute to H generation for R=3.3-33%.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)