Optical emission spectroscopic study on H-assisted plasma for anisotropic deposition of Cu films

J. Umetsu, K. Inoue, K. Koga, M. Shiratani

Research output: Contribution to journalConference articlepeer-review

Abstract

We have studied dependence of Hα intensity and electron density on the discharge power and gas flow rate ratio R H2/(H2 + Ar), to obtain information on a discharge condition bringing about a high H flux to film surfaces, because irradiation of H atoms on surfaces removes impurities in films and enhances the deposition rate. The highest Hα intensity, which is obtained for the discharge power of 500 W and R3.3%, is 10 times as high as that for previous deposition condition of the discharge power of 150 W and R11%. Moreover emission spectra suggest Ar metastable contribute to H generation for R3.3-33%.

Original languageEnglish
Article number062007
JournalJournal of Physics: Conference Series
Volume100
Issue numberPart 6
DOIs
Publication statusPublished - Mar 27 2008
Event17th International Vacuum Congress, IVC 2007, 13th International Conference on Surface Science, ICSS 2007 and International Conference on Nanoscience and Technology, ICN+T 2007 - Stockholm, Sweden
Duration: Jul 2 2007Jul 6 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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