We have studied dependence of Hα intensity and electron density on the discharge power and gas flow rate ratio R H2/(H2 + Ar), to obtain information on a discharge condition bringing about a high H flux to film surfaces, because irradiation of H atoms on surfaces removes impurities in films and enhances the deposition rate. The highest Hα intensity, which is obtained for the discharge power of 500 W and R3.3%, is 10 times as high as that for previous deposition condition of the discharge power of 150 W and R11%. Moreover emission spectra suggest Ar metastable contribute to H generation for R3.3-33%.
|Journal||Journal of Physics: Conference Series|
|Issue number||Part 6|
|Publication status||Published - Mar 27 2008|
|Event||17th International Vacuum Congress, IVC 2007, 13th International Conference on Surface Science, ICSS 2007 and International Conference on Nanoscience and Technology, ICN+T 2007 - Stockholm, Sweden|
Duration: Jul 2 2007 → Jul 6 2007
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)