Optical memory elements with extremely wide hysteresis window (94mA) using partly saturable-absorber novel active MMI Bi-stable laser diodes

H. A. Bastawrous, Haisong Jiang, Y. Tahara, S. Matsuo, Kiichi Hamamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Novel active MMI bi-stable laser diodes are proposed and demonstrated. Using partly saturable-absorber configuration in active MMI, extremely wide hysteresis window of 94mA was achieved with 30fJ optical switching energy in 335μm total device length.

Original languageEnglish
Title of host publicationNational Fiber Optic Engineers Conference, NFOEC 2010
Publication statusPublished - Dec 1 2010
EventNational Fiber Optic Engineers Conference, NFOEC 2010 - San Diego, CA, United States
Duration: Mar 21 2010Mar 25 2010

Other

OtherNational Fiber Optic Engineers Conference, NFOEC 2010
CountryUnited States
CitySan Diego, CA
Period3/21/103/25/10

Fingerprint

Optical data storage
Saturable absorbers
optical switching
Hysteresis
Semiconductor lasers
absorbers
semiconductor lasers
hysteresis
configurations
energy

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Optical memory elements with extremely wide hysteresis window (94mA) using partly saturable-absorber novel active MMI Bi-stable laser diodes. / Bastawrous, H. A.; Jiang, Haisong; Tahara, Y.; Matsuo, S.; Hamamoto, Kiichi.

National Fiber Optic Engineers Conference, NFOEC 2010. 2010.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bastawrous, HA, Jiang, H, Tahara, Y, Matsuo, S & Hamamoto, K 2010, Optical memory elements with extremely wide hysteresis window (94mA) using partly saturable-absorber novel active MMI Bi-stable laser diodes. in National Fiber Optic Engineers Conference, NFOEC 2010. National Fiber Optic Engineers Conference, NFOEC 2010, San Diego, CA, United States, 3/21/10.
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