Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

Y. Kawakami, A. Kaneta, L. Su, Y. Zhu, Koichi Okamoto, M. Funato, A. Kikuchi, K. Kishino

Research output: Contribution to journalArticle

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Abstract

The optical properties of InGaN/GaN quantum wells, which were nanopatterned into cylindrical shapes with diameters of 2 μm, 1 μm, or 500 nm by chemically assisted ion beam etching, were investigated. Photoluminescence (PL) and time-resolved PL measurements suggest inhomogeneous relaxation of the lattice-mismatch induced strain in the InGaN layers. By comparing to a strain distribution simulation, we found that partial stain relaxation occurs at the free side wall, but strain remains in the middle of the pillar structures. The strain relaxation leads to an enhanced radiative recombination rate by a factor of 4-8. On the other hand, nonradiative recombination processes are not strongly affected, even by postgrowth etching. Those characteristics are clearly reflected in the doughnut-shape emission patterns observed by optical microscopy.

Original languageEnglish
Article number023522
JournalJournal of Applied Physics
Volume107
Issue number2
DOIs
Publication statusPublished - Feb 8 2010

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ion beams
etching
optical properties
photoluminescence
strain distribution
radiative recombination
quantum wells
microscopy
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kawakami, Y., Kaneta, A., Su, L., Zhu, Y., Okamoto, K., Funato, M., ... Kishino, K. (2010). Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching. Journal of Applied Physics, 107(2), [023522]. https://doi.org/10.1063/1.3280032

Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching. / Kawakami, Y.; Kaneta, A.; Su, L.; Zhu, Y.; Okamoto, Koichi; Funato, M.; Kikuchi, A.; Kishino, K.

In: Journal of Applied Physics, Vol. 107, No. 2, 023522, 08.02.2010.

Research output: Contribution to journalArticle

Kawakami, Y, Kaneta, A, Su, L, Zhu, Y, Okamoto, K, Funato, M, Kikuchi, A & Kishino, K 2010, 'Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching', Journal of Applied Physics, vol. 107, no. 2, 023522. https://doi.org/10.1063/1.3280032
Kawakami, Y. ; Kaneta, A. ; Su, L. ; Zhu, Y. ; Okamoto, Koichi ; Funato, M. ; Kikuchi, A. ; Kishino, K. / Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching. In: Journal of Applied Physics. 2010 ; Vol. 107, No. 2.
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