Optical thin films grown by surface chemical reaction for high-power lasers

Shin ichi Zaitsu; Shinji Motokoshi; Takahisa Jitsuno; Masahiro Nakatsuka; Tatsuhiko Yamanaka

doi:10.1117/12.380929

Optical thin films grown by surface chemical reaction for high-power lasers

Shin ichi Zaitsu, Shinji Motokoshi, Takahisa Jitsuno, Masahiro Nakatsuka, Tatsuhiko Yamanaka

Research output: Contribution to journal › Conference article › peer-review

Abstract

We prepared optical thin films grown with surface chemical reactions using TiCl₄ and H₂O for TiO₂. The nonuniformity of thickness distribution was under 1% over 240 mm in diameter. The structure TiO₂ film grown at 25 °C was amorphous. The structure changed into polycrystalline with an increase of growth temperature up to 400 °C. Secondary ion mass spectrometry showed that chloride residents presented in the films at every growth temperature. However, these chloride residents could be removed by thermal annealing at 400 °C. The TiO₂ film at the growth temperature of 25 °C had a laser-induced damage threshold of 5 J/cm² for 1-ns, 1064 nm laser pulse. The damage threshold of TiO₂ films decreased at higher growth temperature. Chloride in the films had no influence on the laser-induced damage threshold.

Original language	English
Pages (from-to)	546-552
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3889
DOIs	https://doi.org/10.1117/12.380929
Publication status	Published - 2000
Externally published	Yes
Event	Advanced High-Power Lasers - Osaka, Jpn Duration: Nov 1 1999 → Nov 5 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.380929

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title = "Optical thin films grown by surface chemical reaction for high-power lasers",

abstract = "We prepared optical thin films grown with surface chemical reactions using TiCl4 and H2O for TiO2. The nonuniformity of thickness distribution was under 1% over 240 mm in diameter. The structure TiO2 film grown at 25 °C was amorphous. The structure changed into polycrystalline with an increase of growth temperature up to 400 °C. Secondary ion mass spectrometry showed that chloride residents presented in the films at every growth temperature. However, these chloride residents could be removed by thermal annealing at 400 °C. The TiO2 film at the growth temperature of 25 °C had a laser-induced damage threshold of 5 J/cm2 for 1-ns, 1064 nm laser pulse. The damage threshold of TiO2 films decreased at higher growth temperature. Chloride in the films had no influence on the laser-induced damage threshold.",

author = "Zaitsu, {Shin ichi} and Shinji Motokoshi and Takahisa Jitsuno and Masahiro Nakatsuka and Tatsuhiko Yamanaka",

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volume = "3889",

pages = "546--552",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Advanced High-Power Lasers ; Conference date: 01-11-1999 Through 05-11-1999",

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TY - JOUR

T1 - Optical thin films grown by surface chemical reaction for high-power lasers

AU - Zaitsu, Shin ichi

AU - Motokoshi, Shinji

AU - Jitsuno, Takahisa

AU - Nakatsuka, Masahiro

AU - Yamanaka, Tatsuhiko

PY - 2000

Y1 - 2000

N2 - We prepared optical thin films grown with surface chemical reactions using TiCl4 and H2O for TiO2. The nonuniformity of thickness distribution was under 1% over 240 mm in diameter. The structure TiO2 film grown at 25 °C was amorphous. The structure changed into polycrystalline with an increase of growth temperature up to 400 °C. Secondary ion mass spectrometry showed that chloride residents presented in the films at every growth temperature. However, these chloride residents could be removed by thermal annealing at 400 °C. The TiO2 film at the growth temperature of 25 °C had a laser-induced damage threshold of 5 J/cm2 for 1-ns, 1064 nm laser pulse. The damage threshold of TiO2 films decreased at higher growth temperature. Chloride in the films had no influence on the laser-induced damage threshold.

AB - We prepared optical thin films grown with surface chemical reactions using TiCl4 and H2O for TiO2. The nonuniformity of thickness distribution was under 1% over 240 mm in diameter. The structure TiO2 film grown at 25 °C was amorphous. The structure changed into polycrystalline with an increase of growth temperature up to 400 °C. Secondary ion mass spectrometry showed that chloride residents presented in the films at every growth temperature. However, these chloride residents could be removed by thermal annealing at 400 °C. The TiO2 film at the growth temperature of 25 °C had a laser-induced damage threshold of 5 J/cm2 for 1-ns, 1064 nm laser pulse. The damage threshold of TiO2 films decreased at higher growth temperature. Chloride in the films had no influence on the laser-induced damage threshold.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Advanced High-Power Lasers

Y2 - 1 November 1999 through 5 November 1999

ER -

Optical thin films grown by surface chemical reaction for high-power lasers

Abstract

All Science Journal Classification (ASJC) codes

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