Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)

Md Kabiruzzaman, Takeshi Nakagawa, Seigi Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).

Original languageEnglish
Title of host publication2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages218-221
Number of pages4
ISBN (Electronic)9781538651612
DOIs
Publication statusPublished - Feb 12 2019
EventJoint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 - Kitakyushu, Japan
Duration: Jun 25 2018Jun 28 2018

Publication series

Name2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018

Conference

ConferenceJoint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
CountryJapan
CityKitakyushu
Period6/25/186/28/18

Fingerprint

Low energy electron diffraction
Diffraction patterns
Silicon
Electron
Diffraction
Optimization
Nitridation
Energy
Ultrahigh vacuum
Scanning tunneling microscopy
Auger electron spectroscopy
Insulator
Growth Conditions
Microscopy
Oxidation
Spectroscopy
Scanning
Vacuum

All Science Journal Classification (ASJC) codes

  • Signal Processing
  • Control and Optimization
  • Artificial Intelligence
  • Computer Vision and Pattern Recognition
  • Information Systems

Cite this

Kabiruzzaman, M., Nakagawa, T., & Mizuno, S. (2019). Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001). In 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 (pp. 218-221). [8641044] (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIEV.2018.8641044

Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001). / Kabiruzzaman, Md; Nakagawa, Takeshi; Mizuno, Seigi.

2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 218-221 8641044 (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kabiruzzaman, M, Nakagawa, T & Mizuno, S 2019, Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001). in 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018., 8641044, 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018, Institute of Electrical and Electronics Engineers Inc., pp. 218-221, Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018, Kitakyushu, Japan, 6/25/18. https://doi.org/10.1109/ICIEV.2018.8641044
Kabiruzzaman M, Nakagawa T, Mizuno S. Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001). In 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 218-221. 8641044. (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018). https://doi.org/10.1109/ICIEV.2018.8641044
Kabiruzzaman, Md ; Nakagawa, Takeshi ; Mizuno, Seigi. / Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001). 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 218-221 (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018).
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