Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)

Md Kabiruzzaman; Takeshi Nakagawa; Seigi Mizuno

doi:10.1109/ICIEV.2018.8641044

Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001)

Md Kabiruzzaman, Takeshi Nakagawa, Seigi Mizuno

Quantum Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).

Original language	English
Title of host publication	2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	218-221
Number of pages	4
ISBN (Electronic)	9781538651612
DOIs	https://doi.org/10.1109/ICIEV.2018.8641044
Publication status	Published - Feb 12 2019
Event	Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 - Kitakyushu, Japan Duration: Jun 25 2018 → Jun 28 2018

Publication series

Name	2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018

Conference

Conference	Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
Country	Japan
City	Kitakyushu
Period	6/25/18 → 6/28/18

All Science Journal Classification (ASJC) codes

Signal Processing
Control and Optimization
Artificial Intelligence
Computer Vision and Pattern Recognition
Information Systems

Access to Document

10.1109/ICIEV.2018.8641044

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Kabiruzzaman, M., Nakagawa, T., & Mizuno, S. (2019). Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). In 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 (pp. 218-221). [8641044] (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIEV.2018.8641044

Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). / Kabiruzzaman, Md; Nakagawa, Takeshi ; Mizuno, Seigi.

2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 218-221 8641044 (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kabiruzzaman, M, Nakagawa, T & Mizuno, S 2019, Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). in 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018., 8641044, 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018, Institute of Electrical and Electronics Engineers Inc., pp. 218-221, Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018, Kitakyushu, Japan, 6/25/18. https://doi.org/10.1109/ICIEV.2018.8641044

Kabiruzzaman M, Nakagawa T , Mizuno S. Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). In 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 218-221. 8641044. (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018). https://doi.org/10.1109/ICIEV.2018.8641044

Kabiruzzaman, Md ; Nakagawa, Takeshi ; Mizuno, Seigi. / Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 218-221 (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018).

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abstract = "Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).",

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