Abstract
Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).
| Original language | English |
|---|---|
| Title of host publication | 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 218-221 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781538651612 |
| DOIs | |
| Publication status | Published - Feb 12 2019 |
| Event | Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 - Kitakyushu, Japan Duration: Jun 25 2018 → Jun 28 2018 |
Publication series
| Name | 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 |
|---|
Conference
| Conference | Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 |
|---|---|
| Country | Japan |
| City | Kitakyushu |
| Period | 6/25/18 → 6/28/18 |
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All Science Journal Classification (ASJC) codes
- Signal Processing
- Control and Optimization
- Artificial Intelligence
- Computer Vision and Pattern Recognition
- Information Systems
Cite this
Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001). / Kabiruzzaman, Md; Nakagawa, Takeshi; Mizuno, Seigi.
2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 218-221 8641044 (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)
AU - Kabiruzzaman, Md
AU - Nakagawa, Takeshi
AU - Mizuno, Seigi
PY - 2019/2/12
Y1 - 2019/2/12
N2 - Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).
AB - Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).
UR - http://www.scopus.com/inward/record.url?scp=85063207563&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85063207563&partnerID=8YFLogxK
U2 - 10.1109/ICIEV.2018.8641044
DO - 10.1109/ICIEV.2018.8641044
M3 - Conference contribution
AN - SCOPUS:85063207563
T3 - 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
SP - 218
EP - 221
BT - 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -