Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)

Md Kabiruzzaman; Takeshi Nakagawa; Seigi Mizuno

doi:10.1109/ICIEV.2018.8641044

Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001)

Md Kabiruzzaman, Takeshi Nakagawa, Seigi Mizuno

Quantum Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).

Original language	English
Title of host publication	2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	218-221
Number of pages	4
ISBN (Electronic)	9781538651612
DOIs	https://doi.org/10.1109/ICIEV.2018.8641044
Publication status	Published - Feb 12 2019
Event	Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 - Kitakyushu, Japan Duration: Jun 25 2018 → Jun 28 2018

Publication series

Name	2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018

Conference

Conference	Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
Country/Territory	Japan
City	Kitakyushu
Period	6/25/18 → 6/28/18

All Science Journal Classification (ASJC) codes

Signal Processing
Control and Optimization
Artificial Intelligence
Computer Vision and Pattern Recognition
Information Systems

Access to Document

10.1109/ICIEV.2018.8641044

Cite this

Kabiruzzaman, M., Nakagawa, T., & Mizuno, S. (2019). Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). In 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 (pp. 218-221). [8641044] (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIEV.2018.8641044

Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). / Kabiruzzaman, Md; Nakagawa, Takeshi; Mizuno, Seigi.

2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 218-221 8641044 (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kabiruzzaman, M, Nakagawa, T & Mizuno, S 2019, Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). in 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018., 8641044, 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018, Institute of Electrical and Electronics Engineers Inc., pp. 218-221, Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018, Kitakyushu, Japan, 6/25/18. https://doi.org/10.1109/ICIEV.2018.8641044

Kabiruzzaman M, Nakagawa T, Mizuno S. Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). In 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 218-221. 8641044. (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018). https://doi.org/10.1109/ICIEV.2018.8641044

Kabiruzzaman, Md ; Nakagawa, Takeshi ; Mizuno, Seigi. / Optimization of growth procedure for silicon oxinitride (Si₄O₅N₃) single-layer on SiC(0001). 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 218-221 (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018).

@inproceedings{8fdbe0c72be04cc19c87807e8b3233c8,

title = "Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)",

abstract = "Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).",

author = "Md Kabiruzzaman and Takeshi Nakagawa and Seigi Mizuno",

note = "Funding Information: ACKNOWLEDGMENT The financial support for this work was obtained from JSPS KAKENHI Grant numbers JP15H03677 and JP15K13504. Publisher Copyright: {\textcopyright} 2018 IEEE.; Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 ; Conference date: 25-06-2018 Through 28-06-2018",

year = "2019",

month = feb,

day = "12",

doi = "10.1109/ICIEV.2018.8641044",

language = "English",

series = "2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "218--221",

booktitle = "2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018",

address = "United States",

}

TY - GEN

T1 - Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)

AU - Kabiruzzaman, Md

AU - Nakagawa, Takeshi

AU - Mizuno, Seigi

PY - 2019/2/12

Y1 - 2019/2/12

N2 - Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).

AB - Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).

UR - http://www.scopus.com/inward/record.url?scp=85063207563&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063207563&partnerID=8YFLogxK

U2 - 10.1109/ICIEV.2018.8641044

DO - 10.1109/ICIEV.2018.8641044

M3 - Conference contribution

AN - SCOPUS:85063207563

T3 - 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018

SP - 218

EP - 221

BT - 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018

Y2 - 25 June 2018 through 28 June 2018

ER -