TY - GEN
T1 - Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)
AU - Kabiruzzaman, Md
AU - Nakagawa, Takeshi
AU - Mizuno, Seigi
N1 - Funding Information:
ACKNOWLEDGMENT The financial support for this work was obtained from JSPS KAKENHI Grant numbers JP15H03677 and JP15K13504.
Publisher Copyright:
© 2018 IEEE.
PY - 2019/2/12
Y1 - 2019/2/12
N2 - Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).
AB - Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).
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U2 - 10.1109/ICIEV.2018.8641044
DO - 10.1109/ICIEV.2018.8641044
M3 - Conference contribution
AN - SCOPUS:85063207563
T3 - 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
SP - 218
EP - 221
BT - 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
Y2 - 25 June 2018 through 28 June 2018
ER -