Optimization of machining conditions of basic-type CMP/P-CVM fusion processing using SiC substrate

Yasuhisa Sano, Kousuke Shiozawa, Toshiro Doi, Syuhei Kurokawa, Hideo Aida, Koki Oyama, Tadakazu Miyashita, Haruo Sumizawa, Kazuto Yamauchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We proposed a high-efficiency planarization method that combines two processes, namely mechanical polishing, wherein the convex part of the work surface is converted to a damaged layer, and atmospheric-pressure plasma etching, wherein the damaged convex area is efficiently removed. For the effective generation of the damaged layer, we used cross-sectional transmission electron microscopy to investigate machining conditions using SiC substrates. Results revealed that the thickness of the damaged layer increased with the processing pressure, but it was insensitive to the processing time and rotation speed. By optimizing the machining conditions, a decreasing rate of the step height approximately seven times larger than its value during simple mechanical polishing was obtained using combined processing.

Original languageEnglish
Title of host publication2015 International Conference on Planarization/CMP Technology, ICPT 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781619565104
Publication statusPublished - Feb 17 2016
EventInternational Conference on Planarization/CMP Technology, ICPT 2015 - Chandler, United States
Duration: Sep 30 2015Oct 2 2015

Publication series

Name2015 International Conference on Planarization/CMP Technology, ICPT 2015

Other

OtherInternational Conference on Planarization/CMP Technology, ICPT 2015
CountryUnited States
CityChandler
Period9/30/1510/2/15

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials

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