TY - GEN
T1 - Optimization of machining conditions of basic-type CMP/P-CVM fusion processing using SiC substrate
AU - Sano, Yasuhisa
AU - Shiozawa, Kousuke
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Aida, Hideo
AU - Oyama, Koki
AU - Miyashita, Tadakazu
AU - Sumizawa, Haruo
AU - Yamauchi, Kazuto
N1 - Publisher Copyright:
© 2015 American Vacuum Society.
PY - 2016/2/17
Y1 - 2016/2/17
N2 - We proposed a high-efficiency planarization method that combines two processes, namely mechanical polishing, wherein the convex part of the work surface is converted to a damaged layer, and atmospheric-pressure plasma etching, wherein the damaged convex area is efficiently removed. For the effective generation of the damaged layer, we used cross-sectional transmission electron microscopy to investigate machining conditions using SiC substrates. Results revealed that the thickness of the damaged layer increased with the processing pressure, but it was insensitive to the processing time and rotation speed. By optimizing the machining conditions, a decreasing rate of the step height approximately seven times larger than its value during simple mechanical polishing was obtained using combined processing.
AB - We proposed a high-efficiency planarization method that combines two processes, namely mechanical polishing, wherein the convex part of the work surface is converted to a damaged layer, and atmospheric-pressure plasma etching, wherein the damaged convex area is efficiently removed. For the effective generation of the damaged layer, we used cross-sectional transmission electron microscopy to investigate machining conditions using SiC substrates. Results revealed that the thickness of the damaged layer increased with the processing pressure, but it was insensitive to the processing time and rotation speed. By optimizing the machining conditions, a decreasing rate of the step height approximately seven times larger than its value during simple mechanical polishing was obtained using combined processing.
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M3 - Conference contribution
AN - SCOPUS:84964433368
T3 - 2015 International Conference on Planarization/CMP Technology, ICPT 2015
BT - 2015 International Conference on Planarization/CMP Technology, ICPT 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Conference on Planarization/CMP Technology, ICPT 2015
Y2 - 30 September 2015 through 2 October 2015
ER -