Optimization of magnetic-field response of bend resistance in ballistic two-dimensional electron gas

Takahiro Matsunaga, Makoto Hidegara, Kohsuke Furukawa, Masahiro Hara, Tatsuya Nomura, Takashi Kimura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have proposed a novel device geometry of the bend resistance for collimated ballistic electrons with high magnetic sensitivity. The field response of the bend resistance can be effectively tuned by changing the relative position between two point contacts. The asymmetric field dependence of the bend resistance is found to be induced by introducing conductance asymmetry between the two point contacts. The validity of the proposed device was also confirmed experimentally by using a patterned GaAs/AlGaAs two-dimensional electron gas system.

Original languageEnglish
Article number073001
JournalApplied Physics Express
Volume5
Issue number7
DOIs
Publication statusPublished - Jul 1 2012

Fingerprint

Two dimensional electron gas
Point contacts
Ballistics
ballistics
electron gas
Magnetic fields
optimization
magnetic fields
Geometry
Electrons
aluminum gallium arsenides
asymmetry
sensitivity
geometry
electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Optimization of magnetic-field response of bend resistance in ballistic two-dimensional electron gas. / Matsunaga, Takahiro; Hidegara, Makoto; Furukawa, Kohsuke; Hara, Masahiro; Nomura, Tatsuya; Kimura, Takashi.

In: Applied Physics Express, Vol. 5, No. 7, 073001, 01.07.2012.

Research output: Contribution to journalArticle

Matsunaga, Takahiro ; Hidegara, Makoto ; Furukawa, Kohsuke ; Hara, Masahiro ; Nomura, Tatsuya ; Kimura, Takashi. / Optimization of magnetic-field response of bend resistance in ballistic two-dimensional electron gas. In: Applied Physics Express. 2012 ; Vol. 5, No. 7.
@article{05885feba8d549a195461e50a062f7f6,
title = "Optimization of magnetic-field response of bend resistance in ballistic two-dimensional electron gas",
abstract = "We have proposed a novel device geometry of the bend resistance for collimated ballistic electrons with high magnetic sensitivity. The field response of the bend resistance can be effectively tuned by changing the relative position between two point contacts. The asymmetric field dependence of the bend resistance is found to be induced by introducing conductance asymmetry between the two point contacts. The validity of the proposed device was also confirmed experimentally by using a patterned GaAs/AlGaAs two-dimensional electron gas system.",
author = "Takahiro Matsunaga and Makoto Hidegara and Kohsuke Furukawa and Masahiro Hara and Tatsuya Nomura and Takashi Kimura",
year = "2012",
month = "7",
day = "1",
doi = "10.1143/APEX.5.073001",
language = "English",
volume = "5",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "7",

}

TY - JOUR

T1 - Optimization of magnetic-field response of bend resistance in ballistic two-dimensional electron gas

AU - Matsunaga, Takahiro

AU - Hidegara, Makoto

AU - Furukawa, Kohsuke

AU - Hara, Masahiro

AU - Nomura, Tatsuya

AU - Kimura, Takashi

PY - 2012/7/1

Y1 - 2012/7/1

N2 - We have proposed a novel device geometry of the bend resistance for collimated ballistic electrons with high magnetic sensitivity. The field response of the bend resistance can be effectively tuned by changing the relative position between two point contacts. The asymmetric field dependence of the bend resistance is found to be induced by introducing conductance asymmetry between the two point contacts. The validity of the proposed device was also confirmed experimentally by using a patterned GaAs/AlGaAs two-dimensional electron gas system.

AB - We have proposed a novel device geometry of the bend resistance for collimated ballistic electrons with high magnetic sensitivity. The field response of the bend resistance can be effectively tuned by changing the relative position between two point contacts. The asymmetric field dependence of the bend resistance is found to be induced by introducing conductance asymmetry between the two point contacts. The validity of the proposed device was also confirmed experimentally by using a patterned GaAs/AlGaAs two-dimensional electron gas system.

UR - http://www.scopus.com/inward/record.url?scp=84863765428&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863765428&partnerID=8YFLogxK

U2 - 10.1143/APEX.5.073001

DO - 10.1143/APEX.5.073001

M3 - Article

AN - SCOPUS:84863765428

VL - 5

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 7

M1 - 073001

ER -