Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals

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7 Citations (Scopus)

Abstract

The influence of power control on the multiplication of basal plane dislocations (BPDs) during PVT growth of 4H-SiC single crystals was studied by numerical modeling. Three sets of different power histories during growth were tested: continuously increasing power, continuously decreasing power, and constant power. The results show that optimization of the power history control is crucial for the reduction of basal plane dislocations during growth. If only low BPD density is concerned, then constant low power is the best choice. However, if both low BPD density and high growth rate are desirable, then concave continuously increasing power is the best choice.

Original languageEnglish
Pages (from-to)92-97
Number of pages6
JournalJournal of Crystal Growth
Volume392
DOIs
Publication statusPublished - Apr 15 2014

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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