Optimization of the design of a crucible for a SiC sublimation growth system using a global model

X. J. Chen, L. J. Liu, H. Tezuka, Y. Usuki, K. Kakimoto

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate.

Original languageEnglish
Pages (from-to)1810-1814
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
Publication statusPublished - Apr 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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