Optimization of the design of a crucible for a SiC sublimation growth system using a global model

X. J. Chen; L. J. Liu; H. Tezuka; Y. Usuki; K. Kakimoto

doi:10.1016/j.jcrysgro.2007.11.016

Optimization of the design of a crucible for a SiC sublimation growth system using a global model

X. J. Chen, L. J. Liu, H. Tezuka, Y. Usuki, K. Kakimoto

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate.

Original language	English
Pages (from-to)	1810-1814
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	7-9
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.11.016
Publication status	Published - Apr 2008

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2007.11.016

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@article{6f81392bd8d24215bd6ffd7fb4a20783,

title = "Optimization of the design of a crucible for a SiC sublimation growth system using a global model",

abstract = "Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate.",

author = "Chen, {X. J.} and Liu, {L. J.} and H. Tezuka and Y. Usuki and K. Kakimoto",

year = "2008",

month = apr,

doi = "10.1016/j.jcrysgro.2007.11.016",

language = "English",

volume = "310",

pages = "1810--1814",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "7-9",

}

TY - JOUR

T1 - Optimization of the design of a crucible for a SiC sublimation growth system using a global model

AU - Chen, X. J.

AU - Liu, L. J.

AU - Tezuka, H.

AU - Usuki, Y.

AU - Kakimoto, K.

PY - 2008/4

Y1 - 2008/4

N2 - Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate.

AB - Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate.

UR - http://www.scopus.com/inward/record.url?scp=41449117934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41449117934&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.11.016

DO - 10.1016/j.jcrysgro.2007.11.016

M3 - Article

AN - SCOPUS:41449117934

SN - 0022-0248

VL - 310

SP - 1810

EP - 1814

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 7-9

ER -

Optimization of the design of a crucible for a SiC sublimation growth system using a global model

Abstract

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