TY - JOUR
T1 - Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures
AU - Lee, Hee Chul
AU - Asano, Tanemasa
AU - Ishiwara, Hiroshi
AU - Furukawa, Seijiro
PY - 1986/7
Y1 - 1986/7
N2 - Dependences of the crystallinity and surface morphology of GaAs films grown on CaF2/Si structures on such growth parameters as substrate temperature, growth rate and substrate orientation have been investigated. It has been found that GaAs films having both good crystalline quality and smooth surface can be grown on the (111) substrates by decreasing the growth rate and the substrate temperature, while the crystalline quality of the films on the (100) substrates is virtually independent of the growth rate.
AB - Dependences of the crystallinity and surface morphology of GaAs films grown on CaF2/Si structures on such growth parameters as substrate temperature, growth rate and substrate orientation have been investigated. It has been found that GaAs films having both good crystalline quality and smooth surface can be grown on the (111) substrates by decreasing the growth rate and the substrate temperature, while the crystalline quality of the films on the (100) substrates is virtually independent of the growth rate.
UR - http://www.scopus.com/inward/record.url?scp=3743093616&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3743093616&partnerID=8YFLogxK
U2 - 10.1143/JJAP.25.L595
DO - 10.1143/JJAP.25.L595
M3 - Article
AN - SCOPUS:3743093616
VL - 25
SP - L595-L597
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -