Abstract
Dependences of the crystallinity and surface morphology of GaAs films grown on CaF2/Si structures on such growth parameters as substrate temperature, growth rate and substrate orientation have been investigated. It has been found that GaAs films having both good crystalline quality and smooth surface can be grown on the (111) substrates by decreasing the growth rate and the substrate temperature, while the crystalline quality of the films on the (100) substrates is virtually independent of the growth rate.
| Original language | English |
|---|---|
| Pages (from-to) | L595-L597 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 25 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 1986 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Lee, H. C., Asano, T., Ishiwara, H., & Furukawa, S. (1986). Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures. Japanese Journal of Applied Physics, 25(7), L595-L597. https://doi.org/10.1143/JJAP.25.L595