Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Dependences of the crystallinity and surface morphology of GaAs films grown on CaF2/Si structures on such growth parameters as substrate temperature, growth rate and substrate orientation have been investigated. It has been found that GaAs films having both good crystalline quality and smooth surface can be grown on the (111) substrates by decreasing the growth rate and the substrate temperature, while the crystalline quality of the films on the (100) substrates is virtually independent of the growth rate.

Original languageEnglish
Pages (from-to)L595-L597
JournalJapanese Journal of Applied Physics
Volume25
Issue number7
DOIs
Publication statusPublished - Jul 1986

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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