Optimum discharge condition of DC bias electron cyclotron resonance plasma sputtering for high quality Si epitaxial growth

Junsi Gao, Hiroshi Nakashima, Junli Wang, Kanako Iwanaga, Hideharu Nakashima, Ken Ichi Ikeda, Katsuhiko Furukawa, Katsunori Muraoka

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An electron cyclotron resonance (ECR) plasma sputtering method, combined with DC substrate bias, has been developed to deposit single crystal thin films at the low substrate temperature of 400°C and a conventional base pressure of 5 × 10-7 Torr. At the optimum discharge condition of deposition pressure of 2.2 m Torr and substrate bias of + 10 V, with both the ECR power and the rf power for sputtering of 500 W, crystallographically perfect single crystal deposition was found to be possible. These results have been interpreted as supplying a sufficient ion flux to adatoms while maintaining a sufficiently low ion energy to avoid substrate and film damage during deposition.

Original languageEnglish
Pages (from-to)2834-2838
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume39
Issue number5 A
Publication statusPublished - May 1 2000

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Electron cyclotron resonance
electron cyclotron resonance
Epitaxial growth
Sputtering
sputtering
direct current
Plasmas
Substrates
Single crystals
base pressure
Adatoms
supplying
single crystals
Ions
adatoms
ions
Deposits
deposits
Fluxes
damage

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Optimum discharge condition of DC bias electron cyclotron resonance plasma sputtering for high quality Si epitaxial growth. / Gao, Junsi; Nakashima, Hiroshi; Wang, Junli; Iwanaga, Kanako; Nakashima, Hideharu; Ikeda, Ken Ichi; Furukawa, Katsuhiko; Muraoka, Katsunori.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 39, No. 5 A, 01.05.2000, p. 2834-2838.

Research output: Contribution to journalArticle

@article{daa703e175204595b676c1ddabf7a4df,
title = "Optimum discharge condition of DC bias electron cyclotron resonance plasma sputtering for high quality Si epitaxial growth",
abstract = "An electron cyclotron resonance (ECR) plasma sputtering method, combined with DC substrate bias, has been developed to deposit single crystal thin films at the low substrate temperature of 400°C and a conventional base pressure of 5 × 10-7 Torr. At the optimum discharge condition of deposition pressure of 2.2 m Torr and substrate bias of + 10 V, with both the ECR power and the rf power for sputtering of 500 W, crystallographically perfect single crystal deposition was found to be possible. These results have been interpreted as supplying a sufficient ion flux to adatoms while maintaining a sufficiently low ion energy to avoid substrate and film damage during deposition.",
author = "Junsi Gao and Hiroshi Nakashima and Junli Wang and Kanako Iwanaga and Hideharu Nakashima and Ikeda, {Ken Ichi} and Katsuhiko Furukawa and Katsunori Muraoka",
year = "2000",
month = "5",
day = "1",
language = "English",
volume = "39",
pages = "2834--2838",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "5 A",

}

TY - JOUR

T1 - Optimum discharge condition of DC bias electron cyclotron resonance plasma sputtering for high quality Si epitaxial growth

AU - Gao, Junsi

AU - Nakashima, Hiroshi

AU - Wang, Junli

AU - Iwanaga, Kanako

AU - Nakashima, Hideharu

AU - Ikeda, Ken Ichi

AU - Furukawa, Katsuhiko

AU - Muraoka, Katsunori

PY - 2000/5/1

Y1 - 2000/5/1

N2 - An electron cyclotron resonance (ECR) plasma sputtering method, combined with DC substrate bias, has been developed to deposit single crystal thin films at the low substrate temperature of 400°C and a conventional base pressure of 5 × 10-7 Torr. At the optimum discharge condition of deposition pressure of 2.2 m Torr and substrate bias of + 10 V, with both the ECR power and the rf power for sputtering of 500 W, crystallographically perfect single crystal deposition was found to be possible. These results have been interpreted as supplying a sufficient ion flux to adatoms while maintaining a sufficiently low ion energy to avoid substrate and film damage during deposition.

AB - An electron cyclotron resonance (ECR) plasma sputtering method, combined with DC substrate bias, has been developed to deposit single crystal thin films at the low substrate temperature of 400°C and a conventional base pressure of 5 × 10-7 Torr. At the optimum discharge condition of deposition pressure of 2.2 m Torr and substrate bias of + 10 V, with both the ECR power and the rf power for sputtering of 500 W, crystallographically perfect single crystal deposition was found to be possible. These results have been interpreted as supplying a sufficient ion flux to adatoms while maintaining a sufficiently low ion energy to avoid substrate and film damage during deposition.

UR - http://www.scopus.com/inward/record.url?scp=0033688519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033688519&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033688519

VL - 39

SP - 2834

EP - 2838

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 A

ER -