Ordered structure in non-axisymmetric flow of silicon melt convection

Koichi Kakimoto, Masahito Watanabe, Minoru Eguchi, Taketoshi Hibiya

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

This paper describes the three-dimensional non-axisymmetric flow of a silicon melt in a silicon Czochralski system. A stable vortex with almost the same angular velocity as the crucible is observed by in-situ detection of silicon melt convection using double X-ray radiography. To determine the flow structure in detail, three-dimensional numerical simulation is also carried out for the same geometry; this gives both the three-dimensional temperature and the velocity fields. The simulation predicts a stable vortex rotating with the crucible. The temperature field is also modulated in the azimuthal direction due to the stable vortex. The results of the experiments and numerical simulation show that the non-axisymmetric flow is due to a baroclinic instability.

Original languageEnglish
Pages (from-to)435-440
Number of pages6
JournalJournal of Crystal Growth
Volume126
Issue number2-3
DOIs
Publication statusPublished - Jan 2 1993
Externally publishedYes

Fingerprint

Silicon
Vortex flow
convection
Crucibles
crucibles
vortices
silicon
baroclinic instability
X ray radiography
simulation
Computer simulation
Angular velocity
radiography
Flow structure
angular velocity
Temperature distribution
temperature distribution
velocity distribution
Geometry
geometry

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Ordered structure in non-axisymmetric flow of silicon melt convection. / Kakimoto, Koichi; Watanabe, Masahito; Eguchi, Minoru; Hibiya, Taketoshi.

In: Journal of Crystal Growth, Vol. 126, No. 2-3, 02.01.1993, p. 435-440.

Research output: Contribution to journalArticle

Kakimoto, Koichi ; Watanabe, Masahito ; Eguchi, Minoru ; Hibiya, Taketoshi. / Ordered structure in non-axisymmetric flow of silicon melt convection. In: Journal of Crystal Growth. 1993 ; Vol. 126, No. 2-3. pp. 435-440.
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