Ordered structures and phase states in epitaxial layers of iii–v semiconductor alloys

Syo Matsumura, Noriyuki Kuwano, Kensuke Oki

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The conditions for atomic long-range ordering and probable phase states in (001) and (110) epilayers of III–V semiconductor alloys of the A0.5B0.5C type have been discussed in terms of a simple phenomenological Ising model taking into account the layer-by-layer stacking sequence of epitaxial growth. The results clearly explain some specific features of the epitaxial phase formation which have been revealed by experiments. It is suggested that the epitaxial growth can develop atomic long-range order even in alloys which have a tendency toward phase separation in the bulk state.

Original languageEnglish
Pages (from-to)688-695
Number of pages8
JournalJapanese Journal of Applied Physics
Volume29
Issue number4 R
DOIs
Publication statusPublished - Jan 1 1990

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Epitaxial layers
Epitaxial growth
Semiconductor materials
Ising model
Epilayers
Phase separation
tendencies
Experiments

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ordered structures and phase states in epitaxial layers of iii–v semiconductor alloys. / Matsumura, Syo; Kuwano, Noriyuki; Oki, Kensuke.

In: Japanese Journal of Applied Physics, Vol. 29, No. 4 R, 01.01.1990, p. 688-695.

Research output: Contribution to journalArticle

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