Abstract
The conditions for atomic long-range ordering and probable phase states in (001) and (110) epilayers of III–V semiconductor alloys of the A0.5B0.5C type have been discussed in terms of a simple phenomenological Ising model taking into account the layer-by-layer stacking sequence of epitaxial growth. The results clearly explain some specific features of the epitaxial phase formation which have been revealed by experiments. It is suggested that the epitaxial growth can develop atomic long-range order even in alloys which have a tendency toward phase separation in the bulk state.
| Original language | English |
|---|---|
| Pages (from-to) | 688-695 |
| Number of pages | 8 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 29 |
| Issue number | 4 R |
| DOIs | |
| Publication status | Published - Jan 1 1990 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Ordered structures and phase states in epitaxial layers of iii–v semiconductor alloys. / Matsumura, Syo; Kuwano, Noriyuki; Oki, Kensuke.
In: Japanese Journal of Applied Physics, Vol. 29, No. 4 R, 01.01.1990, p. 688-695.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ordered structures and phase states in epitaxial layers of iii–v semiconductor alloys
AU - Matsumura, Syo
AU - Kuwano, Noriyuki
AU - Oki, Kensuke
PY - 1990/1/1
Y1 - 1990/1/1
N2 - The conditions for atomic long-range ordering and probable phase states in (001) and (110) epilayers of III–V semiconductor alloys of the A0.5B0.5C type have been discussed in terms of a simple phenomenological Ising model taking into account the layer-by-layer stacking sequence of epitaxial growth. The results clearly explain some specific features of the epitaxial phase formation which have been revealed by experiments. It is suggested that the epitaxial growth can develop atomic long-range order even in alloys which have a tendency toward phase separation in the bulk state.
AB - The conditions for atomic long-range ordering and probable phase states in (001) and (110) epilayers of III–V semiconductor alloys of the A0.5B0.5C type have been discussed in terms of a simple phenomenological Ising model taking into account the layer-by-layer stacking sequence of epitaxial growth. The results clearly explain some specific features of the epitaxial phase formation which have been revealed by experiments. It is suggested that the epitaxial growth can develop atomic long-range order even in alloys which have a tendency toward phase separation in the bulk state.
UR - http://www.scopus.com/inward/record.url?scp=0025413704&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025413704&partnerID=8YFLogxK
U2 - 10.1143/JJAP.29.688
DO - 10.1143/JJAP.29.688
M3 - Article
AN - SCOPUS:0025413704
VL - 29
SP - 688
EP - 695
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 R
ER -