Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)

Masahiro Fujii, Tanaka Satoru

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.

Original languageEnglish
Article number016102
JournalPhysical Review Letters
Volume99
Issue number1
DOIs
Publication statusPublished - Jul 5 2007

Fingerprint

periodic variations
bunching
surface energy
etching

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ordering distance of surface nanofacets on vicinal 4H-SiC(0001). / Fujii, Masahiro; Satoru, Tanaka.

In: Physical Review Letters, Vol. 99, No. 1, 016102, 05.07.2007.

Research output: Contribution to journalArticle

@article{5d62b1d77f5f4ff8837946fddc347716,
title = "Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)",
abstract = "After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing {"}quantized step bunching{"} due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.",
author = "Masahiro Fujii and Tanaka Satoru",
year = "2007",
month = "7",
day = "5",
doi = "10.1103/PhysRevLett.99.016102",
language = "English",
volume = "99",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "1",

}

TY - JOUR

T1 - Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)

AU - Fujii, Masahiro

AU - Satoru, Tanaka

PY - 2007/7/5

Y1 - 2007/7/5

N2 - After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.

AB - After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.

UR - http://www.scopus.com/inward/record.url?scp=34547474234&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547474234&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.99.016102

DO - 10.1103/PhysRevLett.99.016102

M3 - Article

AN - SCOPUS:34547474234

VL - 99

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 1

M1 - 016102

ER -