TY - JOUR
T1 - Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)
AU - Fujii, Masahiro
AU - Satoru, Tanaka
PY - 2007/7/5
Y1 - 2007/7/5
N2 - After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.
AB - After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.
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U2 - 10.1103/PhysRevLett.99.016102
DO - 10.1103/PhysRevLett.99.016102
M3 - Article
AN - SCOPUS:34547474234
SN - 0031-9007
VL - 99
JO - Physical Review Letters
JF - Physical Review Letters
IS - 1
M1 - 016102
ER -