A double layer of dianthratetrathiafulvalene (DATTF) and fullerene (C 60) on an n++-Si wafer pretreated with n-octyltrichlorosilane exhibited a high electrical conductivity of σ = 0.12 S/cm and was used as source-drain electrodes in organic field effect transistors (OFETs). A simplified OFET device architecture composed of an organic semiconducting active layer and an organic electrode layer was easily fabricated by successive vacuum deposition of organic donor and acceptor layers. It was confirmed that this device configuration is applicable for both p-and n-type FET operation.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)