Organic field effect transistor characteristics of bis (styryl) anthracene analogues

Kenii Mochida, Misuzu Konishi, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to conferencePaper

Abstract

Bisstyrylanthracene derivatives with long alkyl side chains(BSA) can give thin films composed of giant anisotropic domains by simple melt process. However the large ionization potential of (5.76eV) causes low carrier mobility due to the high hole injection barrier from Au electrode. We synthesized BSA analogues which have various heterocyclic substituents (Fig.2) to reduce barrier and fabricated organic FET devices by vacuum deposition (Fig.la). It has been found that BBTVA has smaller ionization potentials of 5.50eV and faster carrier mobility of 2.0 × 10-5(cm2/Vs) than BSA.

Original languageEnglish
Number of pages1
Publication statusPublished - Oct 19 2006
Event55th SPSJ Annual Meeting - Nagoya, Japan
Duration: May 24 2006May 26 2006

Other

Other55th SPSJ Annual Meeting
CountryJapan
CityNagoya
Period5/24/065/26/06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Mochida, K., Konishi, M., Fujita, K., & Tsutsui, T. (2006). Organic field effect transistor characteristics of bis (styryl) anthracene analogues. Paper presented at 55th SPSJ Annual Meeting, Nagoya, Japan.