Abstract
Dibenzotetrathiafulvalene (DBTTF) analogs containing fused thiophene spacers were synthesized and characterized by cyclic voltammetry, UVvis absorption spectroscopy, quantum chemical calculations, single-crystal X-ray analysis, overlap integral calculations, field-effect transistor (FET) characteristics, X-ray diffraction, and atomic force microscopy (AFM). The single-crystal X-ray analysis revealed that the DBTTF with a thieno[3,2-b]thiophene spacer has a molecular geometry with short intramolecular S⋯S contacts and a herringbone packing structure with short intermolecular S⋯S contacts leading to large two-dimensional overlap integrals. The molecule afforded a crystalline thin film with wellordered molecular orientation corresponding to the single-crystal structure. The FET device based on this molecule exhibited good mobility of 0.29 cm 2V -1 s -1 and low threshold voltage of -0.3V. The effects of the thiophene spacer on the properties, structure, and FET performances were investigated here.
| Original language | English |
|---|---|
| Pages (from-to) | 575-581 |
| Number of pages | 7 |
| Journal | Bulletin of the Chemical Society of Japan |
| Volume | 83 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2010 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
Cite this
Organic field-effect transistors based on π-extended dibenzotetrathiafulvalene analogues with thiophene spacers. / Omata, Keiko; Mamada, Masashi; Nishida, Jun Ichi; Tokito, Shizuo; Yamashita, Yoshiro.
In: Bulletin of the Chemical Society of Japan, Vol. 83, No. 5, 2010, p. 575-581.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Organic field-effect transistors based on π-extended dibenzotetrathiafulvalene analogues with thiophene spacers
AU - Omata, Keiko
AU - Mamada, Masashi
AU - Nishida, Jun Ichi
AU - Tokito, Shizuo
AU - Yamashita, Yoshiro
PY - 2010
Y1 - 2010
N2 - Dibenzotetrathiafulvalene (DBTTF) analogs containing fused thiophene spacers were synthesized and characterized by cyclic voltammetry, UVvis absorption spectroscopy, quantum chemical calculations, single-crystal X-ray analysis, overlap integral calculations, field-effect transistor (FET) characteristics, X-ray diffraction, and atomic force microscopy (AFM). The single-crystal X-ray analysis revealed that the DBTTF with a thieno[3,2-b]thiophene spacer has a molecular geometry with short intramolecular S⋯S contacts and a herringbone packing structure with short intermolecular S⋯S contacts leading to large two-dimensional overlap integrals. The molecule afforded a crystalline thin film with wellordered molecular orientation corresponding to the single-crystal structure. The FET device based on this molecule exhibited good mobility of 0.29 cm 2V -1 s -1 and low threshold voltage of -0.3V. The effects of the thiophene spacer on the properties, structure, and FET performances were investigated here.
AB - Dibenzotetrathiafulvalene (DBTTF) analogs containing fused thiophene spacers were synthesized and characterized by cyclic voltammetry, UVvis absorption spectroscopy, quantum chemical calculations, single-crystal X-ray analysis, overlap integral calculations, field-effect transistor (FET) characteristics, X-ray diffraction, and atomic force microscopy (AFM). The single-crystal X-ray analysis revealed that the DBTTF with a thieno[3,2-b]thiophene spacer has a molecular geometry with short intramolecular S⋯S contacts and a herringbone packing structure with short intermolecular S⋯S contacts leading to large two-dimensional overlap integrals. The molecule afforded a crystalline thin film with wellordered molecular orientation corresponding to the single-crystal structure. The FET device based on this molecule exhibited good mobility of 0.29 cm 2V -1 s -1 and low threshold voltage of -0.3V. The effects of the thiophene spacer on the properties, structure, and FET performances were investigated here.
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U2 - 10.1246/bcsj.20090290
DO - 10.1246/bcsj.20090290
M3 - Article
AN - SCOPUS:77952394269
VL - 83
SP - 575
EP - 581
JO - Bulletin of the Chemical Society of Japan
JF - Bulletin of the Chemical Society of Japan
SN - 0009-2673
IS - 5
ER -