Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye

Jean Charles Maurice Ribierre, M. Sato, A. Ishizuka, T. Tanaka, S. Watanabe, M. Matsumoto, S. Matsumoto, M. Uchiyama, T. Aoyama

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report on the fabrication and the characterization of p-type organic field-effect transistors based on vapor-deposited J-aggregate bisazomethine dye thin films. The absorption spectra of this non-ionic organic semiconductor in the solid state show a strong influence of the film thickness on the J-aggregate formation. However, the electrical characteristics of the devices demonstrate that the hole transport properties do not vary significantly in films thicker than 100 nm. This is due to the fact that the J-aggregates are formed in this material at the surface of the crystalline grains and do not influence the semiconductor/gate dielectric interface and the charge transport properties of the devices. Hole field-effect mobilities as high as 2.4 × 10-4 cm2 V-1 s-1 were obtained and could be slightly improved by a solvent vapor treatment due to changes in the film crystallinity. Overall, this study demonstrates that J-aggregate bisazomethine dye thin films are good candidates for the realization of organic electronic devices.

Original languageEnglish
Pages (from-to)999-1003
Number of pages5
JournalOrganic Electronics
Volume13
Issue number6
DOIs
Publication statusPublished - Jan 1 2012

Fingerprint

Organic field effect transistors
field effect transistors
Dyes
dyes
Thin films
thin films
Transport properties
transport properties
Vapors
vapors
Semiconducting organic compounds
Gate dielectrics
organic semiconductors
Thick films
thick films
Film thickness
Charge transfer
Absorption spectra
crystallinity
film thickness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Ribierre, J. C. M., Sato, M., Ishizuka, A., Tanaka, T., Watanabe, S., Matsumoto, M., ... Aoyama, T. (2012). Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye. Organic Electronics, 13(6), 999-1003. https://doi.org/10.1016/j.orgel.2012.02.020

Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye. / Ribierre, Jean Charles Maurice; Sato, M.; Ishizuka, A.; Tanaka, T.; Watanabe, S.; Matsumoto, M.; Matsumoto, S.; Uchiyama, M.; Aoyama, T.

In: Organic Electronics, Vol. 13, No. 6, 01.01.2012, p. 999-1003.

Research output: Contribution to journalArticle

Ribierre, JCM, Sato, M, Ishizuka, A, Tanaka, T, Watanabe, S, Matsumoto, M, Matsumoto, S, Uchiyama, M & Aoyama, T 2012, 'Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye', Organic Electronics, vol. 13, no. 6, pp. 999-1003. https://doi.org/10.1016/j.orgel.2012.02.020
Ribierre JCM, Sato M, Ishizuka A, Tanaka T, Watanabe S, Matsumoto M et al. Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye. Organic Electronics. 2012 Jan 1;13(6):999-1003. https://doi.org/10.1016/j.orgel.2012.02.020
Ribierre, Jean Charles Maurice ; Sato, M. ; Ishizuka, A. ; Tanaka, T. ; Watanabe, S. ; Matsumoto, M. ; Matsumoto, S. ; Uchiyama, M. ; Aoyama, T. / Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye. In: Organic Electronics. 2012 ; Vol. 13, No. 6. pp. 999-1003.
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