TY - JOUR
T1 - Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye
AU - Ribierre, J. C.
AU - Sato, M.
AU - Ishizuka, A.
AU - Tanaka, T.
AU - Watanabe, S.
AU - Matsumoto, M.
AU - Matsumoto, S.
AU - Uchiyama, M.
AU - Aoyama, T.
N1 - Funding Information:
JCR acknowledges the support by the Basic Science Researcher Program and the Quantum Metamaterials Research Center (QMMRC) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grants 2011-0008650, 2012-0000543).
PY - 2012/6
Y1 - 2012/6
N2 - We report on the fabrication and the characterization of p-type organic field-effect transistors based on vapor-deposited J-aggregate bisazomethine dye thin films. The absorption spectra of this non-ionic organic semiconductor in the solid state show a strong influence of the film thickness on the J-aggregate formation. However, the electrical characteristics of the devices demonstrate that the hole transport properties do not vary significantly in films thicker than 100 nm. This is due to the fact that the J-aggregates are formed in this material at the surface of the crystalline grains and do not influence the semiconductor/gate dielectric interface and the charge transport properties of the devices. Hole field-effect mobilities as high as 2.4 × 10-4 cm2 V-1 s-1 were obtained and could be slightly improved by a solvent vapor treatment due to changes in the film crystallinity. Overall, this study demonstrates that J-aggregate bisazomethine dye thin films are good candidates for the realization of organic electronic devices.
AB - We report on the fabrication and the characterization of p-type organic field-effect transistors based on vapor-deposited J-aggregate bisazomethine dye thin films. The absorption spectra of this non-ionic organic semiconductor in the solid state show a strong influence of the film thickness on the J-aggregate formation. However, the electrical characteristics of the devices demonstrate that the hole transport properties do not vary significantly in films thicker than 100 nm. This is due to the fact that the J-aggregates are formed in this material at the surface of the crystalline grains and do not influence the semiconductor/gate dielectric interface and the charge transport properties of the devices. Hole field-effect mobilities as high as 2.4 × 10-4 cm2 V-1 s-1 were obtained and could be slightly improved by a solvent vapor treatment due to changes in the film crystallinity. Overall, this study demonstrates that J-aggregate bisazomethine dye thin films are good candidates for the realization of organic electronic devices.
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U2 - 10.1016/j.orgel.2012.02.020
DO - 10.1016/j.orgel.2012.02.020
M3 - Article
AN - SCOPUS:84859914467
SN - 1566-1199
VL - 13
SP - 999
EP - 1003
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 6
ER -