Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition

Takeshi Yasuda, Katsuhiko Fujita, Hiroshi Nakashima, Tetsuo Tsutsui

Research output: Contribution to journal › Article

91 Citations (Scopus)

Abstract

We have fabricated organic field-effect transistors (OFETs) using various dielectric films of poly-p-xylylene derivatives to investigate the correlation of field-effect mobility and the surface properties of the dielectric films under constant conditions of fabrication process and molecular backbone. The OFET using pentacene as the semiconductor and poly-chloro-p-xylylene as the dielectric film showed good performance for an OFET using a polymer dielectric film; the field-effect mobility was 0.81 cm2/Vs and the on/off current ratio was 1.4 × 106. We observed an obvious tendency for the hydrophobic dielectric layers to give a higher field-effect mobility for both crystalline organic semiconductors and amorphous polymer semiconductor, though a significant correlation of field-effect mobility with the dielectric constant and surface roughness of the dielectric films was not observed.

Original languageEnglish
Pages (from-to)6614-6618
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number10
Publication statusPublished - Oct 1 2003

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Organic field effect transistors
Dielectric films
Gate dielectrics
Chemical vapor deposition
field effect transistors
vapor deposition
Derivatives
Semiconductor materials
Semiconducting organic compounds
Polymer films
polymers
organic semiconductors
Surface properties
Permittivity
surface properties
Surface roughness
surface roughness
Crystalline materials
tendencies
roughness

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition. / Yasuda, Takeshi; Fujita, Katsuhiko; Nakashima, Hiroshi; Tsutsui, Tetsuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 10, 01.10.2003, p. 6614-6618.

Research output: Contribution to journal › Article

Yasuda, T, Fujita, K, Nakashima, H & Tsutsui, T 2003, 'Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 10, pp. 6614-6618.
Yasuda T, Fujita K, Nakashima H, Tsutsui T. Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 Oct 1;42(10):6614-6618.
Yasuda, Takeshi ; Fujita, Katsuhiko ; Nakashima, Hiroshi ; Tsutsui, Tetsuo. / Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 10. pp. 6614-6618.
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