TY - JOUR
T1 - Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition
AU - Yasuda, Takeshi
AU - Fujita, Katsuhiko
AU - Nakashima, Hiroshi
AU - Tsutsui, Tetsuo
PY - 2003/10
Y1 - 2003/10
N2 - We have fabricated organic field-effect transistors (OFETs) using various dielectric films of poly-p-xylylene derivatives to investigate the correlation of field-effect mobility and the surface properties of the dielectric films under constant conditions of fabrication process and molecular backbone. The OFET using pentacene as the semiconductor and poly-chloro-p-xylylene as the dielectric film showed good performance for an OFET using a polymer dielectric film; the field-effect mobility was 0.81 cm2/Vs and the on/off current ratio was 1.4 × 106. We observed an obvious tendency for the hydrophobic dielectric layers to give a higher field-effect mobility for both crystalline organic semiconductors and amorphous polymer semiconductor, though a significant correlation of field-effect mobility with the dielectric constant and surface roughness of the dielectric films was not observed.
AB - We have fabricated organic field-effect transistors (OFETs) using various dielectric films of poly-p-xylylene derivatives to investigate the correlation of field-effect mobility and the surface properties of the dielectric films under constant conditions of fabrication process and molecular backbone. The OFET using pentacene as the semiconductor and poly-chloro-p-xylylene as the dielectric film showed good performance for an OFET using a polymer dielectric film; the field-effect mobility was 0.81 cm2/Vs and the on/off current ratio was 1.4 × 106. We observed an obvious tendency for the hydrophobic dielectric layers to give a higher field-effect mobility for both crystalline organic semiconductors and amorphous polymer semiconductor, though a significant correlation of field-effect mobility with the dielectric constant and surface roughness of the dielectric films was not observed.
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U2 - 10.1143/jjap.42.6614
DO - 10.1143/jjap.42.6614
M3 - Article
AN - SCOPUS:0347589749
VL - 42
SP - 6614
EP - 6618
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -