Organic-Inorganic Field Effect Transistor with SnI-based Perovskite Channel Layer using Vapor Phase Deposition Technique

Toshinori Matsushima, Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

High field-effect hole mobility of 0.28 cm2/V.s (on/off ratio is more than 105, and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (C6H5C2H 4NH3)2SnI4 prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (C 6H5C2H4NH3) 2PbI4 films prepared on the octadecyltrichlorosilane- covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (C6H5C2H 4NH3)2PbI4 structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (C6H5C2H4NH 3)2SnI4 films via a same sequence of preparation of (C6H5C2H4NH 3)2PbI4 and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (C 6H5C2H4NH3) 2SnI4 structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered SiO2 dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (C6H5C2H4NH 3)2SnI4 have achieved above-described high performance in organic-inorganic hybrid transistors.

Original languageEnglish
Pages (from-to)43-54
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5217
DOIs
Publication statusPublished - Dec 1 2003
EventOrganic Field Effect Transistors II - San Diego, CA, United States
Duration: Aug 3 2003Aug 4 2003

Fingerprint

Perovskite
Field-effect Transistor
Field effect transistors
field effect transistors
Vapors
Substrate
vapor phases
Substrates
Monolayers
Closed
Hole mobility
Electron Transport
Exciton
Crystal microstructure
SiO2
Photoluminescence
hole mobility
Evaporation
Deposition rates
Threshold voltage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

@article{196e56eda8f949b88aee8733d52d06d9,
title = "Organic-Inorganic Field Effect Transistor with SnI-based Perovskite Channel Layer using Vapor Phase Deposition Technique",
abstract = "High field-effect hole mobility of 0.28 cm2/V.s (on/off ratio is more than 105, and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (C6H5C2H 4NH3)2SnI4 prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (C 6H5C2H4NH3) 2PbI4 films prepared on the octadecyltrichlorosilane- covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (C6H5C2H 4NH3)2PbI4 structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (C6H5C2H4NH 3)2SnI4 films via a same sequence of preparation of (C6H5C2H4NH 3)2PbI4 and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (C 6H5C2H4NH3) 2SnI4 structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered SiO2 dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (C6H5C2H4NH 3)2SnI4 have achieved above-described high performance in organic-inorganic hybrid transistors.",
author = "Toshinori Matsushima and Takeshi Yasuda and Katsuhiko Fujita and Tetsuo Tsutsui",
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AU - Matsushima, Toshinori

AU - Yasuda, Takeshi

AU - Fujita, Katsuhiko

AU - Tsutsui, Tetsuo

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N2 - High field-effect hole mobility of 0.28 cm2/V.s (on/off ratio is more than 105, and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (C6H5C2H 4NH3)2SnI4 prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (C 6H5C2H4NH3) 2PbI4 films prepared on the octadecyltrichlorosilane- covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (C6H5C2H 4NH3)2PbI4 structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (C6H5C2H4NH 3)2SnI4 films via a same sequence of preparation of (C6H5C2H4NH 3)2PbI4 and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (C 6H5C2H4NH3) 2SnI4 structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered SiO2 dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (C6H5C2H4NH 3)2SnI4 have achieved above-described high performance in organic-inorganic hybrid transistors.

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